Thermophysical Property Measurements of Non-Equilibrium Melts

非平衡熔体的热物理性质测量

• 批准号: 16360371
• 负责人: FUKUYAMA Hiroyuki
• 金额: $ 8.64万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360371/
• 关键词: electromagnetic levitator; thermophysical property; silicon; modulated laser calorimetry; spectral emissivity; heat capacity; thermal conductivity; hemispherical total emissivity; 交流カロリメトリー; ステンレス鋼

Thermal transport properties of high temperature liquid silicon such as isobaric molar heat capacity, hemispherical total emissivity and thermal conductivity, are key parameter for improving the numerical modeling to produce high quality of single crystalline silicon by Czochralski method. However, it is difficult to measure the thermal transport properties of high-temperature liquid silicon due to the existing of both contamination from contact material and convections. To overcome these problems, a noncontact modulated laser calorimetry in a static magnetic field was developed for simultaneous measurement of the isobaric molar heat capacity, the hemispherical total emissivity and the thermal conductivity of liquid silicon. The isobaric molar heat capacity and the hemispherical total emissivity of liquid silicon were measured at temperature between 1750 K and 2050 K in a static magnetic field from 0.5 to 4 T. The convections in the electromagnetically levitated liquid silicon droplet were effectively suppressed by imposing a static magnetic field. The thermal conductivity was measured at temperatures between 1750 K and 2050 K by imposing the static magnetic field at 2 T or larger with suppressed convections. The determined thermal conductivity shows that the electron contribution is dominant for thermal transport in liquid silicon at temperatures of 1750-2050 K.

高温液态硅的热输运性质，如等压摩尔热容、半球总发射率和热导率，是改进数值模拟的关键参数，以期用提拉法生产出高质量的单晶硅。然而，由于接触材料的污染和对流的存在，高温液态硅的热输运性质很难测量。为了克服这些问题，发展了一种非接触式调制激光测热仪，用于同时测量液态硅的恒压摩尔热容、半球全发射率和导热系数。在0.5T~4T的恒磁场下，测量了1750K~2050K温度范围内液态硅的等压摩尔热容和半球向总发射率。在1750K-2050K温度范围内，通过施加2T或更大的静磁场并抑制对流，测量了材料的热导率。测定的导热系数表明，在1750-2050K温度范围内，电子对液态硅中热输运的贡献占主导地位。

项目成果

Noncontact Measurement of Thermal Conductivity of Liquid Silicon in a Static Magnetic Field

静磁场中液态硅热导率的非接触测量

• 发表时间: 2007
• 期刊: Appl. Phys. Lett Vol. 90
• 作者: T.Tsukada;H.Kobatake
• 通讯作者: H.Kobatake

静磁場印加により対流を抑制した電磁浮遊SUS304融体に対するACカロリメトリー

通过施加静磁场抑制对流对电磁悬浮 SUS304 熔体进行交流量热

• 发表时间: 2007
• 期刊: 日本金属学会概要集
• 作者: T.Tsukada;H.Kobatake;H.Fukuyama;T.Tsukada;H.Kobatake;H.Fukuyama;高橋 翔
• 通讯作者: 高橋 翔

静磁場と電磁浮遊による高温融体の新しい熱容量,放射率,熱伝導率同時測定法の開発

开发利用静磁场和电磁悬浮同时测量高温熔体热容、发射率和导热系数的新方法

• 发表时间: 2006
• 期刊: まてりあ(日本金属学会会報) Vol.45,7月号
• 作者: T.Tsukada;H.Kobatake;H.Fukuyama;T.Tsukada;H.Kobatake;H.Fukuyama;高橋 翔;小畠秀和;H.Kobatake;I.Minato;H.Fukuyama;H.Fukuyama;H.Kobatake;I.Minato;H.Fukuyama;H.Fukuyama;H.Kobatake;塚田隆夫;杉岡健一;高橋 翔;小畠秀和;福山博之;福山博之;小畠秀和;福山博之;塚田隆夫;H.Fukuyama;H.Kobatake;福山博之
• 通讯作者: 福山博之

静磁場中での電磁浮遊SUS304融体への周期加熱レーザーカロリメトリー

静磁场中电磁悬浮SUS304熔体的周期加热激光量热

• 发表时间: 2007
• 期刊: 材料とプロセス Vol. 20
• 作者: T.Tsukada;H.Kobatake;H.Fukuyama;T.Tsukada;H.Kobatake;H.Fukuyama;高橋 翔;小畠秀和
• 通讯作者: 小畠秀和

還元窒化法によるc軸配向AlN膜の作製

还原氮化法制备c轴取向AlN薄膜

• 发表时间: 2005
• 期刊: 日本金属学会講演概要集
• 作者: T.Tsukada;H.Kobatake;H.Fukuyama;T.Tsukada;H.Kobatake;H.Fukuyama;高橋 翔;小畠秀和;H.Kobatake;I.Minato;H.Fukuyama;H.Fukuyama;H.Kobatake;I.Minato;H.Fukuyama;H.Fukuyama;H.Kobatake;塚田隆夫;杉岡健一;高橋 翔;小畠秀和;福山博之;福山博之;小畠秀和;福山博之;塚田隆夫;H.Fukuyama;H.Kobatake;福山博之;福山博之;H.Kawamura;I.Minato;H.Fukuyama;H.Kawamura;W.Nakao;中村克仁
• 通讯作者: 中村克仁