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Physical chemistry of aluminum oxynitride and its processing

氧氮化铝的物理化学及其加工

基本信息

批准号：
11555191
负责人：
FUKUYAMA Hiroyuki
金额：
$ 7.3万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555191/
关键词：
Aluminum oxynitride Aluminum nitride Thermodynamic stability standard Gibbs energy of formation Third-law enthalpy Group III nitride carbothermal nitridation single crystal 標準生成自由エネルギー混合のエンタルピー混合のエントロピー alon 熱力学第3法則エンタルピー酸化

项目摘要

The experimental method for the high-temperature reaction equilibria in the AlN-Al_2O_3 system has been established. The equilibrium N_2-CO gas compositions coexisting with AlN-Al_2O_3-graphite have been successfully measured by quadrupole mass spectrometry and gas chromatography. From the obtained results, the standard Gibbs energy change of the forming reaction of AlN by carbothermal nitridation is determined at temperatures ranging from 1723 to 1899 K. From the obtained result, the standard Gibbs energy of formation of AlN and the third-law enthalpy of formation of AlN at 298.15 K are derived. By using the same method, the thermodynamic stability of γ-aluminum oxynitride spinel, alon, has been determined in the temperature range from 1908 K to 2023 K. The eutectoid decomposition temperature of alon into α-Al_2O_3 and AlN has been evaluated to be 1903 ± 4 K, and the chemical potential diagram of the Al-O-N-C system has been constructed to fabricate an AlN layer on sapphire with*alon buffer. AlN films as a new substrate for blue/UV light emitters have been epitaxialy formed by direct nitridation of sapphire using aluminum oxynitride (alon) as a buffer layer. The alon and AlN layers formed on sapphire have the following crystallographic relation, (0001)AlN//(111)alon//(112^^-0)α-Al_2O_3The lattice mismatch of the interface between sapphire substrate and AlN layer has been reduced almost half by using the along buffer, which significantly attributes to the growth of single crystalline AlN.

建立了AlN-Al_2 O_3系高温反应平衡的实验方法。本文用四极质谱和气相色谱法成功地测定了AlN-Al_2 O_3-石墨共存的N_2-CO平衡气体组成。根据所得结果，测定了1723 ~ 1899 K温度范围内碳热氮化生成AlN反应的标准吉布斯自由能变化。从所获得的结果，AlN的标准生成吉布斯自由能和AlN在298.15 K的第三定律生成焓。用同样的方法测定了γ-氧氮化铝尖晶石Alon在1908 ~ 2023 K温度范围内的热力学稳定性。计算出Alon共析分解为α-Al_2O_3和AlN的温度为1903 ± 4K，并绘制了Al-O-N-C体系的化学势图。以氮氧化铝（alon）为缓冲层，采用直接氮化法在蓝宝石衬底上外延生长了氮化铝（alon）薄膜。在蓝宝石衬底上生长的AlN层和Alon层具有如下的晶体学关系：（0001）AlN//（111）Alon//（112^^-0）α-Al_2O_3。采用沿着缓冲层，使蓝宝石衬底与AlN层之间的晶格失配减小了近一半，这主要归功于AlN单晶的生长。