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完全スピン偏極強磁性体薄膜の作製と評価及びそのスピントロニクス素子への応用

完全自旋极化铁磁薄膜的制备、评价及其在自旋电子器件中的应用

基本信息

批准号：
05F05611
负责人：
秋永広幸
金额：
$ 1.54万
依托单位：
National Institute of Advanced Industrial Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for JSPS Fellows
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

本研究では,完全スピン偏極強磁性体薄膜及の特性評価を行い,その薄膜を用いてスピン依存磁気輸送現象を示す素子構造を開発することを最終目標とした.着任後1年間は,その目標に向けて,薄膜作製と磁気輸送現象測定を行った.平成18年度は,更にその研究をIV族半導体ベースの材料に展開し,当該分野の先駆けとなる成果を得られつつある.具体的には,シリコンカーバイド(SiC)に磁性元素であるMnを導入した物質を合成し,その磁気特性の評価を行った.本成果は,The 10th Joint MMM/Intermag Conference(2007/1/7-11,Baltimore, Maryland, USA)において発表し,SiC基板上にMn薄膜を形成することによってその界面に生成される強磁性体の同定と特性評価を行った成果は,The International Materials Week(2006/6/24-30,Beijing, China), The 13th International Conference on X-ray Absorption Fine Structure(2006/7/9-14,Stanford, CA USA),The International Conference on Magnetism(2006/10/20-25,Kyoto, Japan),及び,The 3rd Asian Forum on Magnetics(2006/9/11-14,Matsue, Japan)で発表した.またSiC基板上に良質なエピタキシャルMn薄膜を成長できることを明らかにした.本成果は,The 14th International Conference on Molecular Beam Epitaxy(2006/9/3-8,Tokyo)において発表した.

This study aims to investigate the application of fully polarized ferromagnetic thin films and their properties. During the first year of his term of office, the magnetic transport phenomena in thin films were measured. In 2018, the research on materials for group IV semiconductors was further developed, and the results of the research were obtained. Specifically, the magnetic element Mn is introduced into the material synthesis and the magnetic properties of SiC are evaluated. This achievement is,The 10th Joint MMM/Intermag Conference (1/7-11/2007,Baltimore, Maryland, USA) Results of the Evaluation of Isostatic Properties of Ferromagnetic Materials for Mn Thin Film Formation on SiC Substrates,The International Materials Week (2006/6/24-30,Beijing, China), The 13th International Conference on X-ray Absorption Fine Structure (2006/7/9-14,Stanford, CA USA),The International Conference on Magnetism(2006/10/20-25,Kyoto, Japan), and The 3rd Asian Forum on Magnetics(2006/9/11-14,Matsue, Japan). The growth of Mn thin films on SiC substrates is of high quality. The 14th International Conference on Molecular Beam Epitaxy(2006/9/3-8,Tokyo) was held in Beijing.