Integrated magnetic sensor using spin tunneling effect

利用自旋隧道效应的集成磁传感器

• 批准号: 17360159
• 负责人: IWATA Satoshi
• 金额: $ 10.1万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360159/
• 关键词: magnetic sensor; giant magnetoresistance; spin tunneling effect; sensor array; MEMS; spin-electronics

Magnetic sensor devices using a giant magnetoresistance effect and a spin tunneling effect were developed and their sensing characteristics were investigated. In order to prepare sensor devices, Co/Cu multilayers and Ta/CoFeB/Cu/CoFe/MnR/Al spin valve films were patterned to strip lines by means of photolithography, which had a shape of 30μm width and 200μm length. Spin tunneling devices with 10×10μm^2〜30×30μm^2 junction, whose structure was Ta/CoFe/MnIr/CoFeB/Al_2O_3/CoFeB/Ta made by 8 sources magnetron sputtering system, were prepared by photolithography. Electronic sensor circuits with a frequency sift type and a voltage shift type, were developed for utilizing prepared magnetic sensor devices. The sensor devices were mount in center of Helmholtz coils, which generate a alternative magnetic field of 1 kHz and out put signal from the sensor circuit was observed by a synchroscope. When the external magnetic field of 1 kHz was applied in perpendicular to easy axis of the free layer of the spin valve, an out put voltage of 70 mV was obtained for 10 Oe external field and a sensitivity of 0.2 Oe was achieved. When the external field was applied in parallel to the easy axis, a larger change of out put voltage was observed compared to perpendicular case.

研制了利用巨磁阻效应和自旋隧穿效应的磁传感器器件，并对其传感特性进行了研究。为了制备传感器器件，采用光刻技术将Co/Cu多层膜和Ta/CoFeB/Cu/CoFe/MnR/Al自旋阀膜制成宽30μm、长200μm的条形线。采用光刻技术制备了具有10×10μm^2 ~ 30×30μm^2结、结构为Ta/CoFe/MnIr/CoFeB/Al_2O_3/CoFeB/Ta的8源磁控溅射自旋隧道器件。利用制备好的磁传感器器件，开发了频率筛分型和电压移分型的电子传感器电路。传感器器件安装在亥姆霍兹线圈的中心，产生1 kHz的交变磁场，传感器电路的输出信号由同步镜观察。在垂直于自旋阀自由层易轴方向施加1 kHz的外磁场时，在10 Oe的外磁场下可获得70 mV的输出电压，灵敏度为0.2 Oe。当外场平行于易轴施加时，输出电压的变化比垂直施加时更大。

项目成果

TMR素子を用いた磁界センサ

使用TMR元件的磁场传感器

• 发表时间: 2007
• 作者: 山田哲也;中島将太;加藤剛志;岩田聡;綱島滋
• 通讯作者: 綱島滋

Magnetization Dynamics in GdFeCo Films Measured Using a Ultra Short Pulse Fiber Laser

使用超短脉冲光纤激光器测量 GdFeCo 薄膜的磁化动力学

• 发表时间: 2007
• 作者: K. Nakazawa;T. Kato;N. Nishizawa;S. Tsunashima;S. Iwata
• 通讯作者: S. Iwata

Suppression of Super High-Energy Species by VHF-DC Superimposed Magnetron Sputter Plasma

VHF-DC 叠加磁控溅射等离子体抑制超高能物质

• 发表时间: 2006
• 期刊: Trans. Mat. Res. Soc. Jpn vol.32
• 作者: Y. Sakashita;Y. Takagi;T. Kato;H. Toyoda;S. Iwata;S. Tsunashima;H. Sugai
• 通讯作者: H. Sugai

Dependence of structure and magnetic properties in magnetic multilayers on sputtering gases

磁性多层结构和磁性能对溅射气体的依赖性

• 发表时间: 2007
• 作者: Y. Maeda;Y. Suzuki;Y. Sakashita;T. Kato;S. Iwata;S. Tsunashima;H. Toyoda;H. Sugai
• 通讯作者: H. Sugai

Perpendicular anisotropy of MBE-grown FePt granular films

• DOI: 10.1016/j.jmmm.2006.10.961
• 发表时间: 2005-04
• 期刊: IEEE Transactions on Magnetics
• 影响因子: 2.1
• 作者: T. Itoh;T. Kato;S. Iwata;S. Tsunashima