GMR magnetic sensor using field modulation of magnetization direction and magnetic wall position

使用磁化方向和磁壁位置场调制的 GMR 磁传感器

• 批准号: 23360153
• 负责人: IWATA Satoshi
• 金额: $ 12.9万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360153/
• 关键词: 磁気センサ; 巨大磁気抵抗効果; スピンバルブ構造; 磁歪現象; 歪みセンサ; 磁化方位変調方式; 磁壁位置変調方式; 磁歪; スピンバルブ膜; 磁気異方性; 触覚センサ; スピントンネル効果; 磁壁移動; 磁壁位置変調

Three kinds of spin valve type magnetic sensors using giant magnetoresistance effect were developed. In case of the sensor with magnetization direction modulating method, the direction of a free layer was oscillatory modulated by ac magnetic field Hac produced by a current flowing through an Al conductor. Low noise output was obtained by multiplying the GMR signal and Hac signal using a multiplier IC. The sensitivity of the sensor was about 4 mOe. In case of the sensor with wall position modulating method, magnetic walls were pinned by forming notches along the line shape of the GMR element. In case of GMR strain sensor, the variation of amplitude of oscillatory modulation of the free layer by applying ac magnetic field can be detected through the variation of magnetic anisotropy of the free layer due to magneto-strictive effect. The linear output with the strain was obtained in strain range of 5x10-4.

研制了三种利用巨磁电阻效应的自旋阀型磁传感器。在具有磁化方向调制方法的传感器的情况下，自由层的方向由流过Al导体的电流产生的交流磁场Hac振荡调制。通过使用乘法器IC将GMR信号与Hac信号相乘来获得低噪声输出。传感器的灵敏度约为4 MoE。在具有壁位置调制方法的传感器的情况下，通过沿GMR元件的线形沿着形成凹口来钉扎磁壁。在GMR应变传感器的情况下，通过施加交流磁场的自由层的振荡调制的幅度的变化可以通过由于磁致伸缩效应引起的自由层的磁各向异性的变化来检测。在5x 10 -4的应变范围内，输出与应变呈线性关系。

项目成果

Bit patterned structure fabricated by Kr+ ion irradiation onto MnBiCu films

MnBiCu 薄膜上 Kr 离子辐照制备位图结构

• DOI: 10.1109/tmag.2012.2198052
• 发表时间: 2012
• 期刊: IEEE Trans. Magn.
• 作者: 池田 翔;伊藤浩之;石原昇;益一哉;D. Oshima;B.Dai;T. Kato;Q. Xu
• 通讯作者: Q. Xu

Magnetic strain sensor using GMR devices

使用 GMR 器件的磁应变传感器

• 发表时间: 2012
• 作者: H. Ito;H. Kim;T. Kato;S. Iwata
• 通讯作者: S. Iwata

Influence of the free-layer domain structure on domain-wall displacing type field sensors

自由层畴结构对畴壁位移型场传感器的影响

• 发表时间: 2011
• 期刊: J. Appl. Phys
• 作者: G. A. Wang;Y. Masuda;T. Kato;S. Iwata
• 通讯作者: S. Iwata

Control of Magnetic Properties of MnBiCu Thin Films by Kr+ Ion Irradiation

Kr离子辐照控制MnBiCu薄膜的磁性能

• 发表时间: 2012
• 期刊: J. Appl. Phys
• 作者: Q. Xu;R. Kanbara;T. Kato;S. Iwata;and S. Tsunashima
• 通讯作者: and S. Tsunashima

Control of magnetic properties of MnGa films by Kr+ ion irradiation for application to bit patterned media

通过 Kr 离子辐照控制 MnGa 薄膜的磁性能，应用于位图介质

• DOI: 10.1109/tmag.2013.2249501
• 发表时间: 2013
• 期刊: IEEE Trans. Magn.
• 作者: 池田 翔;伊藤浩之;石原昇;益一哉;D. Oshima
• 通讯作者: D. Oshima