GMR magnetic sensor using field modulation of magnetization direction and magnetic wall position
GMR magnetic sensor using field modulation of magnetization direction and magnetic wall position
批准号:
23360153
负责人:
IWATA Satoshi
金额:
$12.9万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31
中文摘要
研制了三种利用巨磁电阻效应的自旋阀型磁传感器。在采用磁化方向调制方法的传感器中,自由层的方向受到流过铝导体的电流产生的交流磁场HAc的振荡调制。利用乘法器IC将GMR信号和HAC信号相乘,获得了低噪声输出。该传感器的灵敏度约为4MoE。在具有壁位调制方法的传感器的情况下,通过沿GMR元件的线形形成凹槽来钉扎磁壁。在巨磁电阻应变传感器中,通过磁致伸缩效应引起的自由层磁各向异性的变化,可以检测到施加交流磁场后自由层振荡调制幅度的变化。在5×10~(-4)的应变范围内,获得了与应变成线性关系的输出。
英文摘要
Three kinds of spin valve type magnetic sensors using giant magnetoresistance effect were developed. In case of the sensor with magnetization direction modulating method, the direction of a free layer was oscillatory modulated by ac magnetic field Hac produced by a current flowing through an Al conductor. Low noise output was obtained by multiplying the GMR signal and Hac signal using a multiplier IC. The sensitivity of the sensor was about 4 mOe. In case of the sensor with wall position modulating method, magnetic walls were pinned by forming notches along the line shape of the GMR element. In case of GMR strain sensor, the variation of amplitude of oscillatory modulation of the free layer by applying ac magnetic field can be detected through the variation of magnetic anisotropy of the free layer due to magneto-strictive effect. The linear output with the strain was obtained in strain range of 5x10-4.
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Bit patterned structure fabricated by Kr+ ion irradiation onto MnBiCu films
MnBiCu 薄膜上 Kr 离子辐照制备位图结构
DOI:
10.1109/tmag.2012.2198052
发表时间:
2012
期刊:
IEEE Trans. Magn.
影响因子:
--
作者:
[池田 翔, 伊藤浩之, 石原昇, 益一哉, D. Oshima, B.Dai, T. Kato, Q. Xu]
通讯作者:
Q. Xu
Influence of the free-layer domain structure on domain-wall displacing type field sensors
自由层畴结构对畴壁位移型场传感器的影响
DOI:
--
发表时间:
2011
期刊:
J. Appl. Phys
影响因子:
--
作者:
[G. A. Wang, Y. Masuda, T. Kato, S. Iwata]
通讯作者:
S. Iwata
Magnetic strain sensor using GMR devices
使用 GMR 器件的磁应变传感器
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[H. Ito, H. Kim, T. Kato, S. Iwata]
通讯作者:
S. Iwata
Control of Magnetic Properties of MnBiCu Thin Films by Kr+ Ion Irradiation
Kr离子辐照控制MnBiCu薄膜的磁性能
DOI:
--
发表时间:
2012
期刊:
J. Appl. Phys
影响因子:
--
作者:
[Q. Xu, R. Kanbara, T. Kato, S. Iwata, and S. Tsunashima]
通讯作者:
and S. Tsunashima
Control of magnetic properties of MnGa films by Kr+ ion irradiation for application to bit patterned media
通过 Kr 离子辐照控制 MnGa 薄膜的磁性能,应用于位图介质
DOI:
10.1109/tmag.2013.2249501
发表时间:
2013
期刊:
IEEE Trans. Magn.
影响因子:
--
作者:
[池田 翔, 伊藤浩之, 石原昇, 益一哉, D. Oshima]
通讯作者:
D. Oshima
共 32 条
Spin-wave Devices for Collecting and Detecting Magnetic Nano-particles
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Dynamism of Gloobal Innovation Activities
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Flexible Energy Devices Using Magnetic Fluid
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High Sensitivity Spin-tunneling Magnetic Sensor Using Oscillatory Domain Wall Displacement
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Strategic Multi-Sector Collaborations among NPO, Government and Companies
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Analysis on β1 integrin and its associating molecules in the pathophysiology of Rheumatoid Arthritis and Progressive Systemic Sclerosis.
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A Comparative Study in Japan and the US on Strategic Partnership of Business Organizations and Non - profit Organizations
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Spin transistor using tunneling barrier
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海外基金