IMPROVEMENT OF ELECTRIC PROPERTIES OF ELECTRODEPOSITED CdTe FOR SOLAR CELL BY MICROSTRUCTURE CONTROL
通过微观结构控制改善太阳能电池用电沉积 CdTe 的电性能
基本信息
- 批准号:17360370
- 负责人:
- 金额:$ 10.05万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2005
- 资助国家:日本
- 起止时间:2005 至 2006
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
CdTe is a promisng material for solar cell applications. We demonstrated that aqueous basic ammoniacal electrolytes, instead of traditional acidic sulfate lectrolytes, are suitable for electrodeposition of uniform p-type CdTe layers. However, the resistivity of the p-type CdTe was grater than that of the n-type CdTe from the acidic bath. The grain sizes of as prepared CdTe layers from basic electrolytes are smaller than those from acidic media. To improve the electric properties of electrodeposited CdTe, it may be effective to obtain CdTe with larger grains. Electrodeposition at higher temperature is a plausible way for this purpose. In the ammoniacal basic electrolyte, however, azeotropy occurs at 348 K. Therefore, we developed an autoclave-type vessel and employed a galvanic contact deposition method. CdTe layers were obtained at a temperature range from 363 K to 423 K. The rise in the deposition temperatures slightly increased the Cd contents and mean crystallite size of CdTe. A near stoichiometric CdTe layer with mean crystallite size of 19 nm was obtained at 393 K.The effect of chloride ions was investigated. The asdeposited CdTe layer had an n-type conduction, suggesting that chloride ions in the electrolyte became incorporated into the CdTe layer and formed the donor level.The effect of thermal treatment on the grain size of CdTe was examined. CdTe layer with mean crystallite size of 33 nm was obtained by at 673 K for 30 min. The energy conversion efficiency of the p-CdTe/ n-CdS heterojunction solar cell prepared by electrodeposition and the thermal treatment was 1.8 %.
碲化镉是一种很有前途的太阳能电池材料。我们证明了水碱性氨电解质,而不是传统的酸性硫酸盐电解质,适合电沉积均匀的p型CdTe层。p型CdTe的电阻率大于n型CdTe。碱性电解质制备的碲化镉层的晶粒尺寸小于酸性介质制备的碲化镉层。为了提高电沉积CdTe的电学性能,制备晶粒较大的CdTe可能是有效的方法。在较高温度下电沉积是一种可行的方法。而氨碱性电解质在348 K时发生共沸反应。因此,我们开发了一种高压灭菌型容器,并采用电接触沉积方法。在363 ~ 423 K的温度范围内得到了CdTe层。随着沉积温度的升高,CdTe的Cd含量和平均晶粒尺寸略有增加。在393 K下,得到了平均晶粒尺寸为19 nm的近化学计量CdTe层。考察了氯离子的影响。沉积的CdTe层具有n型导电,表明电解质中的氯离子被纳入CdTe层并形成供体水平。研究了热处理对碲化镉晶粒尺寸的影响。在673 K下加热30 min,得到平均晶粒尺寸为33 nm的CdTe层。经电沉积和热处理制备的p-CdTe/ n-CdS异质结太阳能电池的能量转换效率为1.8%。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
電気化学的に作製したCdTe半導体薄膜 -電気的特性と微細構造-
电化学制备的CdTe半导体薄膜-电性能和微观结构-
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:K.Arai;et al.;荒井健太郎他;粟倉泰弘 他
- 通讯作者:粟倉泰弘 他
塩基性浴を用いたCdTe電析におよぼす塩化物イオンの影響
氯离子对碱性浴 CdTe 电沉积的影响
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Kentaro Arai;et al.;荒井健太郎 他
- 通讯作者:荒井健太郎 他
Effect of Chloride Ions on Electrodeposition of CdTe from Ammoniacal Basic Electrolytes
- DOI:10.1149/1.2150159
- 发表时间:2006-02
- 期刊:
- 影响因子:3.9
- 作者:K. Arai;K. Murase;T. Hirato;Y. Awakura
- 通讯作者:K. Arai;K. Murase;T. Hirato;Y. Awakura
CdTe semiconductor layer prepared by electrodeposition-electrical properties and microstructures
电沉积制备的CdTe半导体层-电性能和微结构
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Kentaro Arai;et al.;AWAKURA Yasuhiro et al.
- 通讯作者:AWAKURA Yasuhiro et al.
Electrochemical Quartz Crystal Microbalance Studies of CdTe Formation and Dissolution in Ammoniacal Basic Aqueous Electrolytes
氨碱性水电解质中 CdTe 形成和溶解的电化学石英晶体微天平研究
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:K.Murase;et al.
- 通讯作者:et al.
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HIRATO Tetsuji其他文献
HIRATO Tetsuji的其他文献
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{{ truncateString('HIRATO Tetsuji', 18)}}的其他基金
Electrodeposition of bright and purified aluminum coatings from organic solvent baths with additives
使用添加剂从有机溶剂浴中电沉积光亮且纯净的铝涂层
- 批准号:
24360308 - 财政年份:2012
- 资助金额:
$ 10.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of alloy plating with high corrosion resistivity without chromate treatments-Addition of self healing property by valence fluctuation
无需铬酸盐处理的高耐腐蚀性合金镀层的开发-通过价数波动增加自修复性能
- 批准号:
19360340 - 财政年份:2007
- 资助金额:
$ 10.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of a Soft Process for CdTe Solar Cell using Photo-assisted Electrodeposition
利用光辅助电镀技术开发 CdTe 太阳能电池软工艺
- 批准号:
14350399 - 财政年份:2002
- 资助金额:
$ 10.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Metal Deposition Process from Quaternary Ammonium Triflate-type Non-aluminate Room Temperature Molten Salts
三氟甲磺酸季铵型非铝酸盐室温熔盐金属沉积工艺
- 批准号:
12650733 - 财政年份:2000
- 资助金额:
$ 10.05万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Preparetion of Rare-earth Metal Films by Electrochemical Deposition from Non-aqueous Madia with High-purity
高纯非水介质电化学沉积制备稀土金属薄膜
- 批准号:
09650808 - 财政年份:1997
- 资助金额:
$ 10.05万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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