Neutron reflectivity study on buried hetero-interface of D monolayer and growth of novel hetero-structure

D单层埋入异质界面的中子反射率研究及新型异质结构的生长

• 批准号: 18510104
• 负责人: ASAOKA Hidehito
• 金额: $ 2.39万
• 依托单位: Japan Atomic Energy Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18510104/
• 关键词: Crystal Growth; Surface and Interface; Nano materials; Hydrogen; Neutron

Strontium and SrO are well-known templates on Si for SrTiO3, a highly-desirable transistor gate material. When stacked on Si, Sr layer becomes amorphous due to its large lattice mismatch of 12%. By introducing a monatomic hydrogen layer on Si, we succeeded in making the Sr (and subsequent SrO) layer (s) grow epitaxially with atomically abrupt interface. However, it is somewhat mysterious how the monatomic hydrogen layer behaves to manage this large mismatch. In order to identify its behavior, we have employed compound analysis by neutron reflectometer as well as multiple-internal-reflection fourier-transform infrared spectroscopy (MIR-FTIR) to investigate the buried hetero-interface of Sr grown on Si (111) 1x1: monohydride. We have found difference between the H- and D-terminated substrates in the reflectivity profiles, and changes in Si-H bonding features with the Sr growth (mainly at the initial monolayer stage) in the FTIR spectra. From these, existence of buried H layer at the hetero-interface is confirmed with its bonding environment.

锶和 SrO 是众所周知的 SrTiO3 的 Si 模板，SrTiO3 是一种非常理想的晶体管栅极材料。当堆叠在 Si 上时，Sr 层由于其 12% 的大晶格失配而变成非晶态。通过在 Si 上引入单原子氢层，我们成功地使 Sr（以及随后的 SrO）层在原子突变界面外延生长。然而，单原子氢层如何应对这种巨大的失配却有些神秘。为了确定其行为，我们采用中子反射计进行化合物分析以及多次内反射傅里叶变换红外光谱（MIR-FTIR）来研究生长在 Si (111) 1x1: 一氢化物上的 Sr 的埋入异质界面。我们发现 H 端基和 D 端基衬底在反射率分布上存在差异，并且在 FTIR 光谱中发现 Si-H 键合特征随 Sr 生长（主要在初始单层阶段）的变化。由此，证实了异质界面处埋置H层的存在及其键合环境。

项目成果

Observation of initial oxidation process on Si(110)-16x2 by scanning tunneling microscopy

扫描隧道显微镜观察Si(110)-16x2的初始氧化过程

• 发表时间: 2007
• 期刊: Jpn.J.Appl.Phys. 46
• 作者: H.Togashi;et. al.
• 通讯作者: et. al.

Crystal growth of SrTiO_3 films on H-terminated Si(111)with SrO buffer layers

带SrO缓冲层的H端Si(111)上SrTiO_3薄膜的晶体生长

• 发表时间: 2006
• 期刊: Surf.Sci. 564
• 作者: Y.Machida;et. al.
• 通讯作者: et. al.

中性子反射率法による研究:埋もれた水素、重水素ヘテロ界面構造

利用中子反射法研究埋藏氢、氘异质界面结构

• 发表时间: 2006
• 作者: 朝岡秀人;他
• 通讯作者: 他

Neutron reflectivity study on buried hetero-interfacial structure of H, D monolayer

H、D单层埋入异质界面结构的中子反射率研究

• 发表时间: 2006
• 作者: H. Asaoka;et. al.
• 通讯作者: et. al.

Single-domain Si(110)-16 X 2 surface fabricated by electromigration

• DOI: 10.1103/physrevb.76.153309
• 发表时间: 2007-10-01
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Yamada, Yoichi;Girard, Antoine;Shamoto, Shin-ichi
• 通讯作者: Shamoto, Shin-ichi