AStudy on Dry etching of C_aF_2using H_2O Vapor Plasma and Solid Source H_2O Plasma

H_2O蒸气等离子体和固体源H_2O等离子体干法刻蚀C_aF_2的研究

• 批准号: 18510108
• 负责人: MATSUTANI Akihiro
• 金额: $ 2.02万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18510108/
• 关键词: plasma processing; semiconductor microfabrication; micromachine; dry etching; fluorite; high density plasma; ultraviolet; optical devices; プラズマ; 水蒸気; 固体ソース

The discharge of the H_2O plasma by introducing water vapor to the process chamber was demonstrated. The H_2O plasma was characterized by the optical emission spectrum analysis and the mass spectrum analysis. We observed some species such as OH, H, O, H_2O and H_3O with both analysis methods. We think that it is also important to take account of the space plasma or the discharge in air for understanding of H_2O plasma.In addition, the discharge of H_2O plasma generated by solid-source H_2O placed in a process chamber was demonstrated. Also, the dry etching process of CaF_2 using solid-source H_2O (ice) plasma was investigated. The average roughness of the etched surface was about 1 nm for an etching depth of in 2 pin which satisfies the requirements for optical device fabrication. We believe that the proposed CaF_2 etching process is suitable for the fabrication of optical devices such as gratings or Fresnel lenses. In addition, we think that the H_2O plasma including OH radicals obtained by this proposed method may be useful for sterilization and as a new UV light source.

通过在处理室中引入水蒸气实现了H_2O等离子体的放电。通过发射光谱和质谱分析对H_2O等离子体进行了表征。两种分析方法均观察到OH、H、O、H_2O和H_3O等物种。我们认为，考虑空间等离子体或空气中的放电对理解H_2O等离子体也是重要的，此外，还演示了固体源H_2O在处理室中产生的H_2O等离子体的放电。研究了固体源H_2O（冰）等离子体干法刻蚀CaF_2的工艺。在2 μ m的刻蚀深度下，刻蚀表面的平均粗糙度约为1nm，满足光学器件制造的要求。我们认为，CaF_2腐蚀工艺适用于制作光栅或菲涅耳透镜等光学器件。此外，我们认为用这种方法得到的含OH自由基的H_2O等离子体可能用于杀菌和作为一种新的紫外光源。

项目成果

Generation of Solid-Source H2O Plasma and Its Application to Dry Etching of CaF2

固源H2O等离子体的产生及其在CaF2干法刻蚀中的应用

• 发表时间: 2008
• 期刊: Jpn. J. Appl. Phys. Vol. 47, no. 6
• 作者: A. Matsutani;H. Ohtsuki and F. Koyama
• 通讯作者: H. Ohtsuki and F. Koyama

Generation of Solid Source H 2O Plasma Liquid Source Dry Etching

固体源H 2O 等离子体液体源干法蚀刻的产生

• 发表时间: 2007
• 作者: Akihiro Matsutani;Hideo Ohtsuki;Fumio Koyama;松谷晃宏;Akihiro Matsutani
• 通讯作者: Akihiro Matsutani

液体ソースドライエッチングプロセスのためのH_2Oプラズマの生成

液源干法刻蚀工艺中H_2O等离子体的产生

• 发表时间: 2007
• 期刊: 平成18年度名古屋大学総合技術研究会報告集 装置技術分科会
• 作者: 松谷彰宏;大槻秀夫;小山不二夫;松谷彰宏
• 通讯作者: 松谷彰宏

固体ソースH_2Oプラズマの生成とCaF_2のドライエッチングへの応用

固体源H_2O等离子体的产生及其在CaF_2干法刻蚀中的应用

• 发表时间: 2008
• 作者: 松谷晃宏;大槻秀夫;小山二三夫
• 通讯作者: 小山二三夫

固体ソースH_2OプラズマによるCaF_2(蛍石)のドライエッチングプロセス

固源H_2O等离子体干法刻蚀CaF_2（萤石）工艺

• 发表时间: 2008
• 作者: 松谷彰宏;大槻秀夫;小山不二夫;松谷彰宏;松谷晃宏
• 通讯作者: 松谷晃宏