A Study on a New Method to Measure Electron Energy Distribution in High Frequency Plasmas
A Study on a New Method to Measure Electron Energy Distribution in High Frequency Plasmas
批准号:
18540496
负责人:
SHINDO Haruo
金额:
$2.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007
中文摘要
提出了一种利用发射探针测量电子温度和电子能量分布函数的新方法。该方法是基于测量发射探头的浮电位与加热电压之间的函数关系。根据浮电位随加热电压变化的实测数据,与在麦克斯韦分布假设下得到的理论曲线进行比较,可以确定电子温度。浮电位变化的总体特征可以解释为加热电压的函数。在ar电感耦合等离子体的电子密度范围2.6×10^<11>-2.8×10^<12> cm^<-3>进行了实验验证。本研究以计算机辅助的方式开发了基于本方法的诊断工具原型。该方法还应用于13.56和60 MHz频率的表面波在陶瓷放电管中产生的SF_6刻蚀等离子体。本实验采用铼丝,测量了SF_6等离子体中的电子能和电子势。这些数据与在SF_6等离子体中得到的Si - 6速率一致。有人强调,本方法的优点在于探针在浮动状态下操作,因此适用于在绝缘容器中产生的等离子体。得到了电子能量分布函数。用表面波法在陶瓷放电管中制备SF_6刻蚀等离子体。
英文摘要
A new method to measure electron temperature and electron energy distribution function by an emissive probe has been proposed. The method is based on measurement of the functional relationship between the floating potential and the heating voltage of emissive probe. From the measured data of the floating potential change as a function of the heating voltage, the electron temperature could be determined by comparing with the theoretical curve obtained under the assumption of Maxwellian distribution. The overall characteristic of the floating potential change could be explained as a function of the heating voltage. The electron temperatures obtained by the present method were consistent with those measured by the rf-compensated Langmuir probe within the error, These experimental verifications were made in the electron density range of 2.6×10^<11>-2.8×10^<12> cm^<-3> in an inductively coupled plasma of Ar.In this study, a prototype of the diagnostic tool based on the present method was developed in a computer-aided fashion. The method was also applied to a SF_6 etching plasma which was produced in ceramic discharge tubes by surface-wave with the frequencies of 13.56 and 60 MHz. In this experiment, the Renium filament was employed, and the erectron energy as well as the potentials were measured in SF_6 plasma. These data were found to be consistent with the Si ecth rate obtained in the SF_6 plasma. It was stressed that the present method was advantageous in that the probe is operated in a floating condition, hence applicable to plasmas produced in an insulated container. The electron energy distribution function was also obtained in. SF_6 etching plasma which was produced in ceramic discharge tubes by surface-wave.
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高周波プラズマ診断におけるエミッシブプローブ特性解析
高频等离子体诊断中的发射探针特性分析
DOI:
--
发表时间:
2006
期刊:
第67回応用物理学会学術講演会 講演予稿集 No.1
影响因子:
--
作者:
[草場康太, 進藤春雄]
通讯作者:
進藤春雄
エミッシブプローブによる高誘電率放電管内のSF_6プラズマ診断とSiエッチング特性
利用发射探针和硅刻蚀特性对高介电常数放电管中的SF_6等离子体进行诊断
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[草場 康太, 進藤 春雄]
通讯作者:
進藤 春雄
エミッシブプローブ法による誘導結合型プラズマ特性診断
使用发射探针法的电感耦合等离子体特性诊断
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[草場 康太, 進藤 春雄]
通讯作者:
進藤 春雄
A New Diagnostic Method of Very-Frequency Plasmas Produced in Insulated Vessels
绝缘容器中产生的高频等离子体的一种新诊断方法
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[Kouta, Kusaba, Haruo, Shindo, Haruo Shindo and Kouta Kusaba]
通讯作者:
Haruo Shindo and Kouta Kusaba
A new emissive-probe method for electron temperature measurement in radio-frequency plasmas
一种用于射频等离子体中电子温度测量的新型发射探针方法
DOI:
--
发表时间:
2007
期刊:
Review of Scientific Instruments 78
影响因子:
--
作者:
[樋田美栄子, 吉谷嵩志, 大澤幸治, Kouta Kusaba and Haruo Shindo]
通讯作者:
Kouta Kusaba and Haruo Shindo
共 11 条
Research on Large-Scaled Line Plasma Production by Microwave
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批准号:20540486
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.83万
-
财政年份:2008
-
负责人:SHINDO Haruo
-
依托单位:
Negative Ion Silicon Oxidation in Oxygen Plasma with High Rate and Low Damage.
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批准号:11680490
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:1999
-
负责人:SHINDO Haruo
-
依托单位:
Role of various inorganic components and enzymes in the formation of humic substances
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批准号:63560066
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1988
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负责人:SHINDO Haruo
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依托单位: