Negative Ion Silicon Oxidation in Oxygen Plasma with High Rate and Low Damage.
氧等离子体中负离子硅氧化高速率、低损伤。
基本信息
- 批准号:11680490
- 负责人:
- 金额:$ 2.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
For one application of negative ions in plasma, silicon oxidation at low temperature was studied by employing oxygen negative ion. In downstream region of microwave oxygen plasma, the silicon oxidation was examined under DC bias. The oxidation depth was much higher under the positive bias than the negative. It was found that the oxidation depth became the highest at a certain distance in downstream, and this was consistent with that at which the probe saturation current ratio showed a local minimum, suggesting a maximum negative ion density there. An in-depth analysis by XPS showed that the oxidation proceeded almost linearly with the substrate bias voltage, and this voltage dependence was also found on the Si substrate heated at 200℃. In order to find an effective condition for ion irradiations, the silicon oxidation was examined under various radio frequencies of the substrate bias. The oxidation depth showed a strong frequency dependence and had a maximum around the ion plasma frequency and thus, it was concluded that the oxidation was due to the negative ions. An X-ray photoelectron spectroscopy analysis revealed less suboxide in the negative-ion irradiation compared with the positive-ion oxidation.For one practical application of this technique, the silicon trench oxidation was also studied with the sample of 0.18 μm width and 0.35 μm depth, and the oxidation characteristics for each portion of trench were examined. The directionality, hence the ratio of oxidation speed in bottom to that on the side wall of the trench, could be improved more than three times by applying the radio frequency bias. With no bias, however, the exidation in bottom was found to be quite difficult and the speed was just less than 50% of the side wall. This concludes that the negative ion silicon oxidation is an innovative technique and its application to the shallow trench cell isolation is highly expected.
作为负离子在等离子体中的应用之一,利用氧负离子研究了硅的低温氧化。在微波氧等离子体下游区域,研究了直流偏置下硅的氧化情况。正偏压下的氧化深度远大于负偏压下的氧化深度。结果表明,氧化深度在下游一定距离处最大,这与探针饱和电流比出现局部极小值的位置相一致,表明负离子浓度在该处最大。XPS分析表明,氧化过程与衬底偏压几乎呈线性关系,在200℃加热的Si衬底上也发现了这种电压依赖性。为了找到一个有效的离子辐照条件,在不同的射频衬底偏压下的硅氧化进行了研究。氧化深度表现出很强的频率依赖性,并在离子等离子体频率附近具有最大值,因此,得出的结论是,氧化是由于负离子。X射线光电子能谱分析表明,负离子辐照产生的亚氧化物比正离子氧化少;作为该技术的一个实际应用,对宽0.18 μm、深0.35 μm的硅沟槽氧化进行了研究,考察了沟槽各部分的氧化特性。通过施加射频偏压,可以将方向性提高三倍以上,从而使沟槽底部的氧化速度与侧壁上的氧化速度之比提高。但在无偏压条件下,底部氧化很困难,其速度仅为侧壁的50%以下。因此,负离子硅氧化技术是一种创新技术,在浅槽单元隔离中的应用前景广阔。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Shindo,: "Silicon Oxidation-Depth Enhancement Employing Negative Ion under Transformer Coupled RF Bias"Proc.46th Symposium of American Vacuum Society, Sheatle, U.S.A.,. 50-51 (1999)
H.Shindo,:“在变压器耦合射频偏压下采用负离子进行硅氧化深度增强”,美国真空学会第 46 届研讨会,美国希特尔。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Fujii,H.Aoyagi,Y.Horiike and H.Shindo: "Silicon Oxidation by Negative and Positive Ion Irradiations in Microwave Oxygen Plasma"Proc.17^<th> Plasama Processing Symposium, Nagasaki, Japan. 519-522 (2000)
T.Fujii、H.Aoyagi、Y.Horiike 和 H.Shindo:“微波氧等离子体中负离子和正离子辐照的硅氧化”Proc.17^<th>等离子体处理研讨会,日本长崎。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Fujii,T.Shimizu,Y.Horiike and H.Shindo: "Silicon Trench Oxidation by Employing Oxygen Negative Ion"Proc.18th Symposium on Plasma Processing, Kyoto. 443-444 (2001)
T.Fujii、T.Shimizu、Y.Horiike 和 H.Shindo:“利用氧负离子进行硅沟槽氧化”Proc.18th Symposma Process 研讨会,京都。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Fujii, T.Shimizu, Y.Horiike and H.Shindo: "Silicon Trench Oxidation by Employing Oxygen Negative Ion"Proc. 18th Symposium on Plasama Processing, Kyoto. 443-444 (2001)
T.Fujii、T.Shimizu、Y.Horiike 和 H.Shindo:“利用氧负离子进行硅沟槽氧化”Proc。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T. Fujii, H.Aoyagi, Y. Horiike and H. Shindo: "Silicon Oxidation by Negative and Positive Ion Irradiations in Microwave Oxygen Plasma"Proc. 17^<th> Plasama Processing Symposium, Nagasaki, Japan. 519-522 (2000)
T. Fujii、H.Aoyagi、Y. Horiike 和 H. Shindo:“微波氧等离子体中负离子和正离子辐照的硅氧化”Proc。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
SHINDO Haruo其他文献
SHINDO Haruo的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('SHINDO Haruo', 18)}}的其他基金
Research on Large-Scaled Line Plasma Production by Microwave
微波大规模生产线等离子体的研究
- 批准号:
20540486 - 财政年份:2008
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
A Study on a New Method to Measure Electron Energy Distribution in High Frequency Plasmas
高频等离子体中电子能量分布测量新方法的研究
- 批准号:
18540496 - 财政年份:2006
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Role of various inorganic components and enzymes in the formation of humic substances
各种无机成分和酶在腐殖质形成中的作用
- 批准号:
63560066 - 财政年份:1988
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
Study on the Epitaxial Growth of Oxide Films in Sputtering focusing on Negative Oxygen Ion Behavior
关注负氧离子行为的溅射氧化膜外延生长研究
- 批准号:
16540454 - 财政年份:2004
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)