Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new device architectures

该项目的重点是开发量子力学设计工具和器件设计指南，通过引入新的通道材料和新的器件结构来实现超高性能信息技术。我们发现，一个最佳的源极和漏极的结构设计是必要的III-V MOSFET优于传统的Si-MOSFET。此外，在硅纳米线MOSFET与栅极全包围架构，源漏隧穿效应被发现可能限制进一步缩小低于10 nm的栅极长度。

This project focused on the development of a quantum mechanical design tool and a device design guideline to realize ultra-high performance information technology by introducing new channel materials and new device architectures. We found that an optimum structural design of source and drain electrodes is necessary for III-V MOSFETs to outperform the conventional Si-MOSFETs. Furthermore, in Si nanowire MOSFETs with gate-all-around architecture, the source-drain tunneling effects were found to possibly limit the further downscaling below 10nm gate length.