Investigation of Refractory Metal Gate on AlGaN/GaN HFET

AlGaN/GaN HFET 难熔金属栅极的研究

基本信息

  • 批准号:
    18560337
  • 负责人:
  • 金额:
    $ 2.48万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2006
  • 资助国家:
    日本
  • 起止时间:
    2006 至 2007
  • 项目状态:
    已结题

项目摘要

In order to achieve high-temperature operating AlGaN/GaN HFET or AlGaN/GaN HFET with self align gate structure, the formation process of gate and ohmic electrodes with refractory metals, the interface reaction, the electrical performance after thermal treatment should be investigated.In this work, Schottky contacts with normal metals like Ni, Cu, refractory metals like Ir, Pt, Rh, Ru, and metal nitrides like TaN, TiN, HfN, ZrN were fabricated. The films of the metal nitrides, which were obtained by reactive sputtering in nitrogen ambient, and the characteristics of the Schottky diodes were evaluated. High-temperature operation from mom temperature to 200℃ and thermal stability test were performed for all the samples. After annealed at 800℃,the performance of TiN diode had almost no degradation. The leakage current of ZrN diode was found to decease by two degrees after 800℃ annealing. The barrier height of this diode increased from 0.66 eV in room temperature to 0.77 eV after annealing. … More The ideality factor of this diode deceased from 1.16 eV in room temperature to 1.06 eV alter annealing.AlGaN/GaN HFET with ZrN and TN gate was also fabricated and evaluated The performances of the devices were found to have no obvious degradation after annealing at 850℃ for 30 seconds. The gate leakage deceased For the evaluation of self-align process, device with gate-first structure was fabricated After TiN or ZrN gate fabrication, Ohmic metals of TiAlTiAu were evaporated. After that, to form Ohmic contact in the drain and sauce region, the device was annealed at 850℃ for 30 seconds. Proper operation was confirmed for this gate-first device.Schottky contacts with refractory metals like W, WTi, WSi, Mo, MoSi and their nitrides were fabricated and evaluated. The leakage current was found to decrease, the barrier height was bind to increase fix the diode with metal nitrides. Especially Sr the diode with MoN Schottky contact, the leakage performance is similar to that of the diode with Ni contact Ideality factor of 1.03 and barrier height of 0.74 eV were obtained for the MoN diode, indicating a near ideal Schottky contact The sample was annealed at temperature from 300℃ to 800℃ with step of 100℃.After annealing, the leakage was found to increase gradually. But the increasing was very small compared with Ni contact. This indicates that the interface is much stable for the MoN-GaN interface. Wet etching of TiN was achieved. Based on the wet etching, self-align AlGaN/GaN HFET process was also tried.In conclusion, the achievements of this project can be considered to be the fundamental technologies in the development of heat-resistant devices and devices with self-align structure. Less
为了实现高温工作AlGaN/GaN HFET或具有自对准栅结构的AlGaN/GaN HFET,需要对难熔金属栅和欧姆电极的形成过程、界面反应、热处理后的电性能进行研究。在这项工作中,制备了与普通金属如Ni, Cu,难熔金属如Ir, Pt, Rh, Ru和金属氮化物如TaN, TiN, HfN, ZrN的肖特基触点。对氮环境下反应溅射制备的金属氮化物薄膜和肖特基二极管的特性进行了评价。对所有样品进行了从母体温度到200℃的高温操作和热稳定性测试。经过800℃退火后,TiN二极管的性能几乎没有下降。经800℃退火后,ZrN二极管的漏电流降低了2度。该二极管的势垒高度由室温时的0.66 eV提高到退火后的0.77 eV。该二极管的理想因数由室温下的1.16 eV降低到退火后的1.06 eV。制备了具有ZrN和TN栅极的AlGaN/GaN HFET,并对其性能进行了评价。在850℃下退火30秒后,器件的性能没有明显的下降。为了评估自对准工艺,制作了栅极优先结构的器件,在制作TiN或ZrN栅极后,蒸发TiAlTiAu中的欧姆金属。之后,为了在漏液区和酱汁区形成欧姆接触,将器件在850℃下退火30秒。已确认该门优先装置可正常运行。制备了W、WTi、WSi、Mo、MoSi等难熔金属及其氮化物的肖特基触点,并对其进行了评价。用金属氮化物固定二极管可以减小漏电流,增加势垒高度。特别是具有单晶硅肖特基触点的单晶硅二极管,其漏电性能与具有Ni触点的单晶硅二极管相似,其理想因数为1.03,势垒高度为0.74 eV,表明单晶硅二极管具有接近理想的肖特基触点。退火后,泄漏量逐渐增大。但与Ni接触相比,增加幅度很小。这表明该界面对于氮化镓界面来说是非常稳定的。实现了TiN的湿法刻蚀。在湿法蚀刻的基础上,尝试了自对准AlGaN/GaN HFET工艺。综上所述,本项目的成果可以认为是开发耐热器件和自对准结构器件的基础技术。少

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Characterization of ZrN Schottky contact on n-GaN under thermal treatment
n-GaN 上 ZrN 肖特基接触在热处理下的表征
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    K. Sawada;et. al.
  • 通讯作者:
    et. al.
Schottky Diodes : Properties, Preparation and Applications
肖特基二极管:特性、制备和应用
Schottky Diodes: Properties, Preparation and Applications
肖特基二极管:特性、制备和应用
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J P. Ao;et. al.;Jin-Ping Ao 等
  • 通讯作者:
    Jin-Ping Ao 等
n-GaNへの高温処理ZrN電極ショットキー特性
n-GaN 上的高温处理 ZrN 电极肖特基特性
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    澤田剛一;新海聡子;敖 金平;岡田政也;胡 成余;廣瀬和之;河合弘治;大野泰夫
  • 通讯作者:
    大野泰夫
TiNゲートAlGaN/GaN HFETの特性評価
TiN 栅极 AlGaN/GaN HFET 的表征
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Masahiro Kudo;Satoko Shinkai;Hideto Yanagisawa;Katsutaka Sasaki;and Yoshio Abe;柴田智晴,君崎英史,佐々木克孝,山根美佐雄,阿部良夫,新海聡子;敖金平,澤田剛一,新海聡子,岡田政也,胡成余,廣瀬和之,河合弘治,大野泰夫
  • 通讯作者:
    敖金平,澤田剛一,新海聡子,岡田政也,胡成余,廣瀬和之,河合弘治,大野泰夫
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AO Jin-ping其他文献

AO Jin-ping的其他文献

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{{ truncateString('AO Jin-ping', 18)}}的其他基金

Development of GaN pH sensor for the surveillance of cell culture
开发用于监测细胞培养的 GaN pH 传感器
  • 批准号:
    22560332
  • 财政年份:
    2010
  • 资助金额:
    $ 2.48万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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基于极化散射效应的AlGaN/GaN HFET质子辐照原位作用机理研究
  • 批准号:
    62374011
  • 批准年份:
    2023
  • 资助金额:
    48.00 万元
  • 项目类别:
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AlGaN/GaN HFET极化散射效应与外界静电场耦合作用机理研究
  • 批准号:
    61904007
  • 批准年份:
    2019
  • 资助金额:
    24.0 万元
  • 项目类别:
    青年科学基金项目
对称极化掺杂增强型功率GaN HFET机理与工艺实现研究
  • 批准号:
    61874149
  • 批准年份:
    2018
  • 资助金额:
    64.0 万元
  • 项目类别:
    面上项目

相似海外基金

Monlithic CMOS/GaN HFET intergration
单片 CMOS/GaN HFET 集成
  • 批准号:
    367800-2008
  • 财政年份:
    2008
  • 资助金额:
    $ 2.48万
  • 项目类别:
    University Undergraduate Student Research Awards
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