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Highly-functional hybrid silicon single-electron devices inccoporating nanoelectromechanical structures

结合纳米机电结构的高功能杂化硅单电子器件

基本信息

批准号：
18310097
负责人：
MIZUTA Hiroshi
金额：
$ 11.4万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18310097/
关键词：
NEMS suspended gate nanoscale MOSFET single-electron transisto silicon nanobridge hybrid simulation 3D FEM simulation equivalent circuit model

项目摘要

Co-integration of silicon-based nanoelectromechanical systems (NEMSs) and single-electron transistors (SETs) was investigated for developing novel functional nanodevcies beyond the conventional MOSFETs and SETs. Hybrid NEMS-MOS-SET simulation technology was first developed by combining three-dimensional mechanical, electrostatic and transport simulation. Based on the numerical results, novel SET-NEMS analytical models were developed and integrated into conventional SPICE circuit simulator. By using these simulation technologies, two device concepts were explored : one which features a mechanically movable gate integrated into SETs (SET-NEMS) and another in which the SET channel itself works as NEMS (NEMSET). For the former structure, we fabricated suspended-gate structures on the silicon-on-insulator (SOD substrates and demonstrated that a rapid 'pull-in' motion of the suspended-gate enables to switch the period of Coulomb oscillation and this may be utilized for signal encoding in the periodicity realizing the offset charge independent SET logic. For the latter structure, we successfully fabricated silicon nanobridge transistors with a suspended quantum dot and demonstrated clear Coulomb blockade characteristics superior to the conventional SETs. In addition, we observed at temperatures<4.2K that Coulomb current peaks disappear for a finite range of source-to-drain voltage, which is attributable to a new type of blockade of single-electron tunneling caused by cavity phonons confined in the suspended quantum dot.

研究了硅基纳米机电系统（NEMS）和单电子晶体管（SET）的共集成，以开发超越传统MOSFET和SET的新型功能纳米器件。混合NEMS-MOS-SET模拟技术是首次将三维力学、静电和输运模拟相结合而发展起来的。在此基础上，提出了一种新的SET-NEMS分析模型，并将其集成到传统的SPICE电路仿真器中。通过使用这些模拟技术，探索了两种器件概念：一种是将机械可移动栅极集成到SET中（SET-NEMS），另一种是SET通道本身作为NEMS（NEMSET）。对于前一种结构，我们在绝缘体上硅（SOD）衬底上制作了悬栅结构，并证明了悬栅的快速“拉入”运动能够切换库仑振荡的周期，这可以用于周期性信号编码，实现偏移电荷无关的SET逻辑。对于后者的结构，我们成功地制造了硅纳米桥晶体管与悬浮的量子点，并表现出明确的库仑阻塞特性优于传统的设置上级。此外，我们观察到在温度<4.2K时，库仑电流峰在有限的源漏电压范围内消失，这归因于由被限制在悬浮量子点中的腔声子引起的对单电子隧穿的新型阻断。