课题基金 / 基金详情

Highly-functional hybrid silicon single-electron devices inccoporating nanoelectromechanical structures

Highly-functional hybrid silicon single-electron devices inccoporating nanoelectromechanical structures
结合纳米机电结构的高功能杂化硅单电子器件
批准号:
18310097
负责人:
MIZUTA Hiroshi
金额:
$11.4万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007

项目摘要

项目成果

MIZUTA Hiroshi的其他基金

相关文献

中文摘要
翻译
研究了硅基纳米机电系统(NEMSs)和单电子晶体管(set)的协整,以开发超越传统mosfet和set的新型功能纳米器件。混合NEMS-MOS-SET仿真技术是首次将三维力学、静电和输运仿真相结合而发展起来的。在此基础上,建立了新的SET-NEMS分析模型,并将其集成到传统的SPICE电路模拟器中。通过使用这些仿真技术,研究人员探索了两种器件概念:一种是集成到SETs (SET-NEMS)中的机械可移动栅极,另一种是SET通道本身作为NEMS (NEMSET)工作。对于前一种结构,我们在绝缘体上硅(SOD)衬底上制作了悬门结构,并证明了悬门的快速“拉入”运动能够切换库仑振荡的周期,这可以用于周期性的信号编码,实现与偏移电荷无关的SET逻辑。对于后一种结构,我们成功地制作了具有悬浮量子点的硅纳米桥晶体管,并展示了优于传统set的清晰的库仑阻塞特性。此外,我们观察到,在温度<4.2K时,库仑电流峰值在源极-漏极电压的有限范围内消失,这是由于悬浮量子点中的腔声子对单电子隧穿的一种新型封锁。
英文摘要
Co-integration of silicon-based nanoelectromechanical systems (NEMSs) and single-electron transistors (SETs) was investigated for developing novel functional nanodevcies beyond the conventional MOSFETs and SETs. Hybrid NEMS-MOS-SET simulation technology was first developed by combining three-dimensional mechanical, electrostatic and transport simulation. Based on the numerical results, novel SET-NEMS analytical models were developed and integrated into conventional SPICE circuit simulator. By using these simulation technologies, two device concepts were explored : one which features a mechanically movable gate integrated into SETs (SET-NEMS) and another in which the SET channel itself works as NEMS (NEMSET). For the former structure, we fabricated suspended-gate structures on the silicon-on-insulator (SOD substrates and demonstrated that a rapid 'pull-in' motion of the suspended-gate enables to switch the period of Coulomb oscillation and this may be utilized for signal encoding in the periodicity realizing the offset charge independent SET logic. For the latter structure, we successfully fabricated silicon nanobridge transistors with a suspended quantum dot and demonstrated clear Coulomb blockade characteristics superior to the conventional SETs. In addition, we observed at temperatures<4.2K that Coulomb current peaks disappear for a finite range of source-to-drain voltage, which is attributable to a new type of blockade of single-electron tunneling caused by cavity phonons confined in the suspended quantum dot.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Top-down and bottom-up approaches towards silicon nanoelectronics (Invited Talk)
自上而下和自下而上的硅纳米电子学方法(特邀演讲)
DOI: --
发表时间: 2006
期刊: Conf. on Optoelectronic and Microelectronic Materials and Devices (COMMAD06) Perth,8
影响因子: --
作者: [H., Mizuta, S., Oda]
通讯作者: Oda
Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots
结合纳米晶硅点的纳米机电非易失性存储器件
DOI: --
发表时间: 2006
期刊: Journal of Applied Physics 100
影响因子: --
作者: [Y.Tsuchiya, K.Takai, N.Momo, T.Nagami, S.Yamaguchi, T.Shimada, H.Mizuta, S.Oda]
通讯作者: S.Oda
DOI: --
发表时间: 2008
期刊: IEEE Transactions on Nanotechnology 7
影响因子: --
作者: [M. Manoharan, S. Oda, et al.]
通讯作者: et al.
Stochastic Coulomb blockade in couple asymmetric silicon dots formed by pattern-dependent oxidation
由图案相关氧化形成的几个不对称硅点的随机库仑阻塞
DOI: --
发表时间: 2008
期刊: Applied Physics Letters (In Press)
影响因子: --
作者: [M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta]
通讯作者: S. Oda and H. Mizuta
共 33 条
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    • 批准号:
      17K11013
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
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    • 财政年份:
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    • 负责人:
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    • 依托单位:
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    • 资助金额:
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    • 财政年份:
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    • 依托单位:
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    • 批准号:
      20591784
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.66万
    • 财政年份:
      2008
    • 负责人:
      MIZUTA Hiroshi
    • 依托单位: