权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Synthesis of Semicenductor Quantum Dots Phosphors and Their Application for the Elecnoluminescence Devices

半导体量子点荧光粉的合成及其在电致发光器件中的应用

基本信息

批准号：
18360317
负责人：
OMATA Takahisa
金额：
$ 11.92万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

项目摘要

1. Synthesis of quantum dots (QDs)CuInS_2 quantum dots with 〜5nm in size were successfully synthesized. The crystal structure of the CuInS_2 QDs, the chalcopyrite-type or the wurtzite-type, was dependent on the amount of the amines and the storage time after addition of amines. The optical absorption edges of the chalcopyrite- and wurtzite-types CuInS_2 QDs obtained were 〜710nm in wavelength. For the chalcopyrite-type CuInS_2, photoluminescence (PL) band at 930nm was observed, and no PL band was observed for the wurtzite-type CuInS_2. The PL band observed for the chalcopyrite-type QDs was attributed to the electron-hole recombination via defect revels. As a result of the further study of the starting solution, we successfully synthesized chalcopyrite-type CuInS_2 QDs with 1.5〜3nm sizes by controlling of the reaction time. For the CuInSe_2 QDs, the increase in PL intensity and the blue shift of the PL wavelength were observed by annealing in oleylamine at 200〜300℃. The changes in the PL properties were related to the increase in the crystallinity of the QDs.2. Improving the PL propertiesThe PL band near optical absorption edge was newly appeared by overcoating of the CuInS_2 QDs by ZnS thin layer. The PL band may be attributable to the exciton recombination. In this experiment, the QDs used was 〜5nm in size. When the QDs with 2〜3nm in size are overcoated by ZnS, the blue PL may be realized.3. Fabrication of the QDs thin films and electroluminescence devicesBy using the ZnS-CuInS_2 alloyed QDs collidal solution as a starting solution, the QDs thin film on the glass substrate, which showed significant PL, was successfully fabricated by electro-spraying. We also fabricated the multilayered EL-device structure, such as glass/ITO/Al_2O_3/QDs-film/Al_2O_3/Al. However, we could not observe any electroluminescence from the device.

1.量子点的合成成功地合成出了尺寸约为5 nm的CuInS_2量子点。CuInS_2量子点的晶体结构是黄铜矿型还是纤锌矿型，取决于胺的量和添加胺后的储存时间。所制得的黄铜矿型和纤锌矿型CuInS_2量子点的光吸收边在710 nm左右。黄铜矿型CuInS_2在930 nm处有光致发光（PL）带，纤锌矿型CuInS_2没有PL带。观察到的黄铜矿型量子点的PL带归因于电子空穴复合通过缺陷revels。通过对起始溶液的进一步研究，我们成功地通过控制反应时间合成了尺寸为1.5 ~ 3 nm的黄铜矿型CuInS_2量子点。对于CuInSe_2量子点，在200 ~ 300℃的油胺溶液中退火后，荧光强度增加，波长蓝移。PL性质的变化与量子点结晶度的增加有关。2.用ZnS薄膜包覆CuInS_2量子点，在光吸收边附近出现了新的发光带。PL带可能是激子复合的结果。在本实验中，所用的量子点的尺寸为15 nm。当量子点尺寸为2 ~ 3 nm时，用ZnS包覆量子点，可以实现蓝光发光.量子点薄膜及电致发光器件的制备以ZnS-CuInS_2合金量子点碰撞溶液为起始溶液，采用电喷雾法在玻璃衬底上成功制备了具有明显发光性能的量子点薄膜。我们也制作了多层电致发光器件结构，如玻璃/ITO/Al_2O_3/量子点薄膜/Al_2O_3/Al，但是我们没有观察到任何电致发光。