Preparation of Enviromental-frienfdly Piezomaterials with Ultrahigh Property by Nanodomain Engineering

在这项研究中，图像化电极被用来诱导更精细的工程结构，结构域的大小为3pm。在134.0℃下，在低于6 kV/cm的电场下进行极化处理，以抑制光刻胶对图像化电极的灼烧。结果表明，在31谐振腔中诱导出了3 ~ 8 ~ 9 pm的梯度畴。到目前为止，当使用整个平面电极时，最小域Ci7P限制在5pm。然而，使用图像化电极，成功地将小于5pm的畴尺寸诱导到谐振腔中。在-243.2 pC/N下测量了chi，该值几乎是-337.7 pC/N的预期d31的70%，域尺寸为3 μm。这种差异是由于外加电场低于6千伏/厘米造成的。这一问题可以通过开发无光刻胶的图案化电极来解决。在未来，将会制备出比3 pm更精细的图像化电极，更多的红色，更高的d_31将会受到挑战。此外，利用TGG法成功制备了[110]定向Ba1103陶瓷。结果表明，在不同的Fm值下，SaT103陶瓷的密度均在96%以上。然而;平均颗粒尺寸约为75 pm，与Takahashi等人和Karaki等人报道的1.6-2.1 pm相比，这个尺寸太大了。在未来，晶粒取向BaT103陶瓷的晶粒ea应低于1 pm。为了实现这一目标，需要一种不使用模板的新制备方法。本研究首次获得d_33为788 pC/N的BaTICI3陶瓷。这些陶瓷具有工程结构，平均结构尺寸为800微米。这一高畴壁密度是导致温度高于500 pC/N的原因。本研究最重要的一点是证实了结构梯度区如90°畴壁区具有超高压电特性的本质。这个概念是通用的，可以应用于任何铁电材料。利用这一概念，我们可以在未来制备d_33为10,000 pC/N的超高压电材料。少

In this study, the patterning electrode was used to induce the finer engineered domain configurations with domain size of 3 pm. The poling treatment was performed at 134.0℃ under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist As the results, the gradient domain sizes from 3 to 8-9 pm were induced into the 31 resonator. Up to date, when the whole plane electrode was used, the minimum domain Ci7P was limited to 5 pm. However, using patterning electrode, the smaller domain size than 5 pm was successfully induced into the resonator. The chi was measured at -243.2 pC/N, and this value was almost 70% of the expected d31 of -337.7 pC/N for the resonator with domain size of 3 μm. This difference was originated from lower applied electric field below 6 kV/cm. This problem can be solved by development of the patterning electrode without photoresist. In the future, the developed patterning electrode with much finer pattern than 3 pm will be prepa … More red, and much higher d_31 will be challenged.Moreover, [110]-oriented Ba1103 ceramics were successfully prepared by the TGG method. It was revealed that the SaT103 ceramics had a high density of over 96% despite various Fm values. However; the average grain sizes were around 75 pm, and this size was too large compared with those (1.6-2.1 pm) reported by Takahashi, et al. and Karaki, et al. In the future, the grain ea should be below I pm for grain-oriented BaT103 ceramics. To achieve this, a new preparation method without using a template is required. In this study, BaTICI3 ceramics with a d_33 of 788 pC/N were first obtained. These ceramics had the engineered domain configuration with an average domain size of 800 run. This high domain wall density was the origin of the do higher than 500 pC/N. The most important point in this study is the confirmation that the structure gradient region such as the 90° domain wall region had an ultrahigh piezoelectric property intrinsically. This concept is universal, and can be applied to any ferroelectric materials. Using this concept, we can prepare ultrahigh-piezoelethric materials with a d_33 of 10,000 pC/N in the future. Less