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Fabrication of field emission and microdischarge devices using femtosemnd laser lithop-aphy

Fabrication of field emission and microdischarge devices using femtosemnd laser lithop-aphy
使用飞秒激光光刻技术制造场发射和微放电装置
批准号:
18360354
负责人:
HIRATA Yoshinori
金额:
$11.05万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007

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中文摘要
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英文摘要
In this study, we fabricated field emission and micro-discharge devices using femtosecond laser lithography. The experimental results are as follows:1. Femtosecond laser lithographyWe proposed the combined process of femtosemnd laser-induced nonlinear lithography and etching processes. This process enables to fabricate microstructures onto nonpanar substrates, which is rather difficult for the conventional photolithography processes.2. Space-selective growth of carbon nanotubes on a microelectrode tipThe patterns were formed on Au thin films by field emitted electron beams extracted from the microelectrode tips overall coated with carbon nanotubes. We investigated the effect of curvature radius, gap length between electrodes and applied voltages on the microfabrication of Au thin films by field emitted electron beams. The increases of curvature radius and applied voltages were effective for pattern formation by field emission, resulting in the patterns of 2μm diameters were created. Carbon nanotubes were space-selectively grown only on the top part of a microelectrode tip. The patterns of approximately 2μm diameters could be formed by using the microelectrodes with CNTs.3. Arrayed microdischarge cavitiesArrays of hollow cathode microelectrode cavities were fabricated in Si wafers by semiconductor technology. The diameter of individual cavity was 30μm. Stable glow discharges were generated in atmospheric pressure of Ar gas. The patterns of 33 μm diameters were successfully formed on a resist thin film by using maskless microdischarge processes with O_2 and Ar mixed gas.
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会议论文
フェムト秒レーザリソグラフィーによる立体的表面加工
使用飞秒激光光刻进行三维表面加工
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [西山宏昭, 溝尻瑞枝, 平田好則]
通讯作者: 平田好則
DOI: 10.1016/j.tsf.2006.02.085
发表时间: 2007-03
期刊: Thin Solid Films
影响因子: 2.1
作者: [Y. Hirata;K. Ozaki;U. Ikeda;M. Mizoshiri]
通讯作者: Y. Hirata;K. Ozaki;U. Ikeda;M. Mizoshiri
Formation of periodic structures by the space-selective precipitation of Ge nanoparticles in channel waveguides
通过通道波导中Ge纳米粒子的空间选择性沉淀形成周期性结构
DOI: --
发表时间:
期刊: Applied Surface Science (in press)
影响因子: --
作者: [H.Nishiyama, Y.Hirata, I.Miyamoto, J.Nishii]
通讯作者: J.Nishii
DOI: --
发表时间: 2006
期刊: Proceedings of 41h International Congress on Laser Advanced Materials Processing
影响因子: --
作者: [M., Mizoshiri, H., Nishiyama, Y., Hirata, J., Nishii, T., Kawahara, T., Kawai]
通讯作者: Kawai
36
    Research on Micro-Thermal Materials Processing with Pulsed Field Emission Current
    • 批准号:
      14350387
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.69万
    • 财政年份:
      2002
    • 负责人:
      HIRATA Yoshinori
    • 依托单位:
    Experimental research of thermal processing phenomena by micro-arc
    • 批准号:
      10450271
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.89万
    • 财政年份:
      1998
    • 负责人:
      HIRATA Yoshinori
    • 依托单位:
    Development of micro-arc welding process
    • 批准号:
      07555219
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $5.18万
    • 财政年份:
      1995
    • 负责人:
      HIRATA Yoshinori
    • 依托单位:
    Sutudy on bridging tranfer phenomena in Gas Metal Arc welding
    • 批准号:
      04650663
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.34万
    • 财政年份:
      1992
    • 负责人:
      HIRATA Yoshinori
    • 依托单位:
    海外基金