Fabrication of field emission and microdischarge devices using femtosemnd laser lithop-aphy
使用飞秒激光光刻技术制造场发射和微放电装置
基本信息
- 批准号:18360354
- 负责人:
- 金额:$ 11.05万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this study, we fabricated field emission and micro-discharge devices using femtosecond laser lithography. The experimental results are as follows:1. Femtosecond laser lithographyWe proposed the combined process of femtosemnd laser-induced nonlinear lithography and etching processes. This process enables to fabricate microstructures onto nonpanar substrates, which is rather difficult for the conventional photolithography processes.2. Space-selective growth of carbon nanotubes on a microelectrode tipThe patterns were formed on Au thin films by field emitted electron beams extracted from the microelectrode tips overall coated with carbon nanotubes. We investigated the effect of curvature radius, gap length between electrodes and applied voltages on the microfabrication of Au thin films by field emitted electron beams. The increases of curvature radius and applied voltages were effective for pattern formation by field emission, resulting in the patterns of 2μm diameters were created. Carbon nanotubes were space-selectively grown only on the top part of a microelectrode tip. The patterns of approximately 2μm diameters could be formed by using the microelectrodes with CNTs.3. Arrayed microdischarge cavitiesArrays of hollow cathode microelectrode cavities were fabricated in Si wafers by semiconductor technology. The diameter of individual cavity was 30μm. Stable glow discharges were generated in atmospheric pressure of Ar gas. The patterns of 33 μm diameters were successfully formed on a resist thin film by using maskless microdischarge processes with O_2 and Ar mixed gas.
在本研究中,我们利用飞秒激光光刻技术制作了场发射和微放电器件。实验结果如下:1.飞秒激光光刻提出了飞秒激光诱导非线性光刻与刻蚀相结合的新工艺。该工艺可以在非晶片衬底上制作微结构,这对于传统的光刻工艺来说是相当困难的。碳纳米管在微电极尖端的空间选择性生长通过场发射电子束从覆盖有碳纳米管的微电极尖端提取的电子束在Au薄膜上形成图案。研究了曲率半径、电极间距和外加电压对场发射电子束微细加工Au薄膜的影响。曲率半径和外加电压的增加有利于场发射图形的形成,形成了直径为2μm的图形。碳纳米管只有空间选择性地生长在微电极尖端的顶部。使用带有碳纳米管的微电极可以形成直径约为2μm的图案。利用半导体技术在硅片上制作了中空阴极微电极阵列。单个腔体直径为30μm,在大气压下产生稳定的辉光放电。采用O_2和Ar混合气体的无掩模微放电工艺,在抗蚀剂薄膜上成功地形成了直径为33μm的图形。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Field emission current and vacuum breakdown by a pointed cathode
- DOI:10.1016/j.tsf.2006.02.085
- 发表时间:2007-03
- 期刊:
- 影响因子:2.1
- 作者:Y. Hirata;K. Ozaki;U. Ikeda;M. Mizoshiri
- 通讯作者:Y. Hirata;K. Ozaki;U. Ikeda;M. Mizoshiri
Formation of periodic structures by the space-selective precipitation of Ge nanoparticles in channel waveguides
通过通道波导中Ge纳米粒子的空间选择性沉淀形成周期性结构
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:H.Nishiyama;Y.Hirata;I.Miyamoto;J.Nishii
- 通讯作者:J.Nishii
Three-dimensional lithography using a self-trapped filament of femtosecond laser pulses
使用飞秒激光脉冲自陷灯丝进行三维光刻
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:M.;Mizoshiri;H.;Nishiyama;Y.;Hirata;J.;Nishii;T.;Kawahara;T.;Kawai
- 通讯作者:Kawai
Analysis of second harmonic generation considering laser absorption with repetitive irradiation of focused beam
考虑聚焦光束重复照射激光吸收的二次谐波产生分析
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Etsuji Ohmura;Kazufumi Nomura
- 通讯作者:Kazufumi Nomura
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HIRATA Yoshinori其他文献
HIRATA Yoshinori的其他文献
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{{ truncateString('HIRATA Yoshinori', 18)}}的其他基金
Research on Micro-Thermal Materials Processing with Pulsed Field Emission Current
脉冲场发射电流微热材料加工研究
- 批准号:
14350387 - 财政年份:2002
- 资助金额:
$ 11.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Experimental research of thermal processing phenomena by micro-arc
微弧热处理现象的实验研究
- 批准号:
10450271 - 财政年份:1998
- 资助金额:
$ 11.05万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of micro-arc welding process
微弧焊接工艺的发展
- 批准号:
07555219 - 财政年份:1995
- 资助金额:
$ 11.05万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Sutudy on bridging tranfer phenomena in Gas Metal Arc welding
熔化极气体保护焊桥接过渡现象的研究
- 批准号:
04650663 - 财政年份:1992
- 资助金额:
$ 11.05万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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- 批准号:
20840030 - 财政年份:2008
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$ 11.05万 - 项目类别:
Grant-in-Aid for Young Scientists (Start-up)
STTR Phase I: Fabrication of Large-Area, High-Density Microdischarge Arrays on Flexible Substrates
STTR 第一阶段:在柔性基板上制造大面积、高密度微放电阵列
- 批准号:
0319577 - 财政年份:2003
- 资助金额:
$ 11.05万 - 项目类别:
Standard Grant