Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films

纳米厚电介质薄膜电子特性的理解和控制

• 批准号: 19106005
• 负责人: TORIUMI Akira
• 金额: $ 65.81万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19106005/
• 关键词: 電気・電子材料; 誘電体物性; 超薄膜; 表面・界面物性; 界面ダイポール; XPS; 構造相転移; Higher-k膜; GeO2; Fermi-level Pinning; ESR; 高圧酸化; ショットキーバリア高さ; High-k膜; Ge; Si-doped HfO2; HfLaOx

The gate insulator thickness is required to be thinned for enhancing semiconductor device performances. This project has aimed at the thinning the insulator thickness electrically by increasing the dielectric constant of the films instead of thinning the physical thickness. Through this research, the energy barrier heights of the insulator films with regard to Si have been obtained systematically. In addition, the stability of dielectric constant, the dipoles formed at interfaces between such films and conventional insulator(SiO_2) have been deeply investigated and modeled in terms of atom kinetics in the bulk films and at the interfaces. Furthermore, hygroscopic properties of rare-earth metal oxides have been characterized thermodynamically and the defect generation origin in GeO_2 which will be a new insulator for new semiconductor(Ge) has been also experimentally clarified.

为了提高半导体器件的性能，需要减薄栅极绝缘体的厚度。该项目旨在通过增加膜的介电常数而不是减薄物理厚度来电减薄绝缘体厚度。通过这项研究，系统地获得了绝缘膜对硅的势垒高度。此外，还对介电常数的稳定性、介电层与传统绝缘体（SiO_2）界面处形成的电偶极子进行了深入的研究，并对体膜中和界面处的原子动力学进行了模拟。此外，还对稀土金属氧化物的吸湿特性进行了实验表征，并从实验上阐明了GeO_2中缺陷产生的原因。GeO_2将成为新型半导体（Ge）的绝缘体。

项目成果

Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy

• DOI: 10.1143/apex.3.061501
• 发表时间: 2010-05
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: L. Zhu;K. Kita;T. Nishimura;K. Nagashio;Shengkai Wang;A. Toriumi

X-ray Photoelectron Spectroscopy Study of Dipole Effects at High-k/SiO_2 Interface

High-k/SiO_2界面偶极子效应的X射线光电子能谱研究

• 发表时间: 2010
• 作者: L.Q.Zhu;K.Kita;T.Nishimura;K.Nagashio;S.K.Wang;A.Toriumi
• 通讯作者: A.Toriumi

On the Origin of Anomalous VTH Shift in high-k MOSFETs

高 k MOSFET 中异常 VTH 漂移的根源

• 发表时间: 2009
• 作者: 鳥海明;喜多浩之
• 通讯作者: 喜多浩之

Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS

基于材料科学的金属栅高 k CMOS 器件性能工程

• 发表时间: 2007
• 作者: A.Toriumi;K.Kita;K.Tomida;Y.Zhao;J.Widiez;T.Nabatame;H.Ota;M.Hirose
• 通讯作者: M.Hirose

GeO2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO2膜とGeO2/Ge界面の独立な制御-

GeO2形成过程中高压氧化和1大气压氧化的本质区别 - 体GeO2薄膜和GeO2/Ge界面的独立控制 -

• 发表时间: 2010
• 作者: 李忠賢;西村知紀;長汐晃輔;喜多浩之;鳥海明
• 通讯作者: 鳥海明