Flexible information devices using high-speed organic transistors

为实现短沟道长度，研制了一种新型结构--阶梯边垂直沟道有机场效应晶体管(SVC-OFET)。SVC-OFET表现出优异的器件性能，具有高电流和高截止频率(约1.5 MHz)。我们提出了一种新的有源天线单元，它具有环状天线和SVC-OFET相结合。通过选择SVC-OFET的结构和材料，可以控制有源天线的特性。有源天线有望应用于印制射频识别标签(RF-ID标签)。

A novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), have been developed for achieving the short channel length. SVC-OFETs showed excellent device performances having a high current and high cutoff frequency of approximately 1.5MHz. we propose new active antenna elements which have a loop antenna combined with SVC-OFETs. By choosing the structure and materials of the SVC-OFETs, the characteristics of the active antenna can be controlled. The active antenna is expected for the application to printed radio-frequency identification tag (RF-ID Tag).