Flexible information devices using high-speed organic transistors

为了实现短沟道长度，开发了一种新型结构的阶梯边缘垂直沟道有机场效应晶体管（SVC-OFET）。svc - ofet具有优异的器件性能，具有约1.5MHz的高电流和高截止频率。我们提出了一种新的有源天线元件，它具有与svc - ofet相结合的环形天线。通过选择svc - ofet的结构和材料，可以控制有源天线的特性。该有源天线有望应用于印刷射频识别标签（RF-ID标签）。

A novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), have been developed for achieving the short channel length. SVC-OFETs showed excellent device performances having a high current and high cutoff frequency of approximately 1.5MHz. we propose new active antenna elements which have a loop antenna combined with SVC-OFETs. By choosing the structure and materials of the SVC-OFETs, the characteristics of the active antenna can be controlled. The active antenna is expected for the application to printed radio-frequency identification tag (RF-ID Tag).