Flexible information devices using high-frequency step-edge organic transistors

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In this study, step-edge vertical-channel field-effect transistors (SVC-OFETs) were fabricated by nanoimprinting and wet printing processes and SVC-OFETs showed high cutoff frequencies of approximately 2 MHz by optimizing the device structure. This high performance of SVC-OFET is suitable to the manufacture of radio-frequency identification (RFID) tags. We demonstrate new active antenna elements for RFID tags in RF (raid frequency 13.56 MHz) region. High modulation more than 10 % was estimated by simulation and the fabricated RF-ID tags on a flexible substrate showed modulation factor of 5.6 %. Furthermore, we demonstrate that the SVC-OFET has advantages for wearable sensors for the future application fields.