Monolithic 3D lntegration of Multlgate Poly-Si TFTs on a Flexible Glass Substrate

柔性玻璃基板上多栅多晶硅 TFT 的单片 3D 集成

• 批准号: 19360165
• 负责人: HARA Akito
• 金额: $ 12.31万
• 依托单位: Tohoku Gakuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360165/
• 关键词: 多結晶シリコン; 水素化微結晶シリコン; 薄膜トランジスタ; ダブルゲート; TFT; poly-Si; 3次元集積回路; シリコン; 立体ゲート

Self-aligned top and bottom metal double-gate n- and p-chlow-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at 550℃. The nominal field-effect mobility of the n- and p-ch TFTs was 635cm^2/Vs and 150cm^2/Vs, respectively, and the s-value of both TFTs was 130mV/dec. The performance characteristics can be used to realize low-power and high-speed circuits on a glass substrate. In order to achieve monolithic 3D integration of TFTs, low-temperature TFT fabrication are necessary for the second and third TFT layers. For this purpose, we developed self-aligned laser-activation top-gate hydrogenated microcrystalline silicon (μc-Si : H) TFTs at a process temperature of 325℃ and achieved a field-effect mobility of 1.1cm^2/Vs in the linear region for n-channel TFTs.

在550℃的玻璃衬底上制作了自对准上下金属双栅n、p沟道低温多晶硅薄膜晶体管（TFT）。n沟道和p沟道TFT的标称场效应迁移率分别为635 cm ^2/Vs和150 cm ^2/Vs，两种TFT的s值均为130 mV/dec。为了实现TFT的单片3D集成，低温TFT制造对于第二和第三TFT层是必要的。为此，我们研制了自对准激光激活顶栅氢化微晶硅（μc-Si：H）TFT，工艺温度为325℃，n沟道TFT线性区的场效应迁移率为1.1cm^2/Vs。

项目成果

Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate

玻璃基板上大晶粒多晶硅薄膜的吸杂

• 发表时间: 2010
• 期刊: Jpn.J.Appl.Phys. 49
• 作者: Akito Hara;Tsutomu Sato
• 通讯作者: Tsutomu Sato

Self-Aligned Top-Gate Nanocrystalline Silicon Thin Film Transistors with Source/Drain Regions Activated by Diode-Pumped Continuous-Wave Green laser

二极管泵浦连续波绿光激光激活的具有源极/漏极区域的自对准顶栅纳米晶硅薄膜晶体管

• 发表时间: 2008
• 期刊: Extended Abstract of the 2008 Inter. Conf. of SOLID STATE DEVICES AND MATERIALS なし
• 作者: W. Sato;A. Hara;S. Kurauch;Y. Doi;M. Kobata;K. Kitahara
• 通讯作者: K. Kitahara

水素化微結晶シリコンを初期膜とするレーザー脱水素およびレーザー結晶化poly-Si TFT

以氢化微晶硅为初始薄膜的激光脱氢和激光晶化多晶硅TFT

• 发表时间: 2009
• 作者: 佐藤旦;梅津渉;山本健一;神原潤二;原明人;北原邦紀
• 通讯作者: 北原邦紀

Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

激光脱氢和氢化纳米晶硅薄膜横向晶化制备大横向多晶硅薄膜

• 发表时间: 2009
• 期刊: Jpn.J.Appl.Phys. 48
• 作者: Tadashi Sato;Kenichi Yamamoto;Junji Kambara;Kuninori Kitahara;Akito Hara
• 通讯作者: Akito Hara

Self-aligned Metal Double-gate P-channel Low-temperature Poly-Si TFTs Fabricated by DPSS CW Green Laser Lateral Crystallization

DPSS连续绿光激光横向晶化自对准金属双栅P沟道低温多晶硅TFT

• 发表时间: 2009
• 期刊: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
• 作者: Tadashi Sato;Kenta Hirose;Kuninori Kitahara;Akito Hara
• 通讯作者: Akito Hara