Monolithic 3D lntegration of Multlgate Poly-Si TFTs on a Flexible Glass Substrate

点击翻译按钮获取中文摘要

Self-aligned top and bottom metal double-gate n- and p-chlow-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at 550℃. The nominal field-effect mobility of the n- and p-ch TFTs was 635cm^2/Vs and 150cm^2/Vs, respectively, and the s-value of both TFTs was 130mV/dec. The performance characteristics can be used to realize low-power and high-speed circuits on a glass substrate. In order to achieve monolithic 3D integration of TFTs, low-temperature TFT fabrication are necessary for the second and third TFT layers. For this purpose, we developed self-aligned laser-activation top-gate hydrogenated microcrystalline silicon (μc-Si : H) TFTs at a process temperature of 325℃ and achieved a field-effect mobility of 1.1cm^2/Vs in the linear region for n-channel TFTs.