Deposition of hetero-structure layered low-k amorphous fluorinated carbon films under sequence control of gas feed and plasma power

气体供给和等离子体功率顺序控制下异质结构层状低k非晶氟化碳薄膜的沉积

• 批准号: 19540517
• 负责人: SUGAWARA Hirotake
• 金额: $ 2.91万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19540517/
• 关键词: プラズマ; 化学気相堆積法; フッ化炭素; 低誘電率; 絶縁膜; 波状化; 低誘電率材料; プラズマCVD; 誘電体; 薄膜堆積; 耐熱性; 電子・電気材料; 積層

Amorphous fluorocarbon (a-C:F) films, which are applicable to insulation of electrical power equipment and integrated circuits, were deposited by plasma-enhanced chemical vapor deposition using a C_8F_<18> feedstock. When the a-C:F films were composed at a low plasma power, the thermal tolerance of the films was weak for less bondings between molecular chains in the a-C:F films (loose films). The dielectric constant of these a-C:F films had a tendency to be lower than that of conventional a-C:F films with dense bondings between molecular chains (firm films). This feature is desirable for reduction of the dielectric energy loss in power equipment and the delay of the signal transmission in the integrated circuits. In addition, we found a waving phenomenon of the firm film due to the heat given during the deposition of the firm film on a loose film. The voids made under the wavy film are also expected to contribute to the reduction of the dielectric constant of the a-C:F films.

采用等离子体增强化学气相沉积（PECVD）技术，以C_8F_2为原料，制备了适用于电力设备和集成电路绝缘的非晶氟碳（a-C：F）薄膜<18>。当在低等离子体功率下合成a-C：F膜时，由于a-C：F膜中分子链之间的键合较少（松散膜），膜的耐热性较弱。这些a-C：F薄膜的介电常数有一种趋势，是低于传统的a-C：F薄膜的分子链之间的致密键合（坚定的膜）。该特征对于减少功率设备中的介电能量损耗和集成电路中的信号传输的延迟是期望的。此外，我们还发现了由于在沉积过程中的热量给松散的薄膜上的坚定的薄膜波动的现象。波纹膜下的空隙也被认为有助于降低a-C：F膜的介电常数。

项目成果

C_8F_<18>プラズマCVDによるa-C : F膜の積層

C_8F_<18>利用等离子CVD法层叠a-C:F膜

• 发表时间: 2007
• 作者: 山内達也;(発表者);菅原広剛;酒井洋輔;須田善行;小池広恵
• 通讯作者: 小池広恵

封じきりC_8F_<18>プラズマCVDによる二層非晶質フッ化炭素膜の間欠堆積

密封C_8F_<18>等离子体CVD间歇沉积两层非晶氟碳薄膜

• 发表时间: 2008
• 作者: 山内達也;菅原広剛;(発表者);酒井洋輔;須田善行;小池広恵
• 通讯作者: 小池広恵

Deposition of layered armorphous fluorocarbon films by C8F18 PECVD

C8F18 PECVD 沉积层状铠装氟碳薄膜

• 发表时间: 2008
• 作者: T. Yamauchi;(発表者);K. Mizuno;H. Sugawara
• 通讯作者: H. Sugawara

C_8F_<18>プラズマCVDにおける発光スペクトルとa-C:F膜の化学結合状態の関連

C_8F_<18>等离子CVD中a-C:F薄膜的发射光谱与化学键态的关系

• 发表时间: 2007
• 作者: 小池広恵;(発表者);菅原広剛;酒井洋輔;須田善行;山内達也;小池広恵
• 通讯作者: 小池広恵

C_8F_<18>プラズマCVDによるa-C : F膜生成とその特性の評価

C_8F_<18>A-C:F等离子CVD成膜及其特性评价

• 发表时间: 2007
• 作者: 小池広恵;(発表者);菅原広剛;酒井洋輔;須田善行;山内達也
• 通讯作者: 山内達也