Design of Magnetostrictive Susceptibility on Magnetostrictive Thin Film

(1)采用直流磁控溅射法，以Ar-N_2或Ar-CH_4混合气体为溅射气体，制备了Sm-Fe超磁致伸缩薄膜。当N_2和CH_4的体积分数分别为1.0%和0.5%时，薄膜的磁致伸缩磁化率达到最大值。(2)用离子镀法制备了Fe-In过饱和固溶体薄膜。(3)用离子轰击参数Pi定量地讨论了离子轰击对Tb-Fe和Sm-Fe薄膜磁致伸缩特性的影响。离子轰击参数Pi可用于薄膜制备过程中的磁致伸缩磁化率的设计或调整。

(1) Sm-Fe thin films as giant magnetostrictive materials were prepared by d.c.magnetron sputtering process with mixed Ar-N_2 gas or Ar-CH_4 gas. The maximum value of magnetostrictive susceptibility of prepared thin films was showed at 1.0 vol% of N_2 and 0.5 vol% of CH_4.(2) Supersaturated solid solution of Fe-In (Fe-In are immiscible system) thin films were prepared by the Ion-Plating process.(3) The effect of ion bomberdment on the magnetostrictive characteristics of Tb-Fe and Sm-Fe films was quantitatively discussed by an ion bombardment parameter P_i. The ion bombardment parameter P_i could be applied to the design or modify the magnetostrictive susceptibility of films upon the film preparations.