Elemental Identification of the dopant on the semiconductor surface by synchrotron-radiation-based scanning tunneling microscopy.

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I have measured the Cu nanodomains on a Ge(111) c(2x8) surface by scanning tunneling microscopy (STM) combined with synchrotron radiation. I have gotten the atomic resolution image of the surface by STM under x-ray radiation. The signal intensity and its difference between the Cu and Ge areas increase in proportion to the induced x-ray intensity. Meanwhile, the Ge atoms move about the surface in the clean Ge(111) area under hard x-ray radiation and the c(2x8) structure on the surface breaks quickly.