本项目针对传统微测辐射热计微桥结构对太赫兹波吸收极低的问题，提出一种RIE修饰的NiCr天线层增强微桥结构的太赫兹波吸收性能，主要开展如下创新研究：(1)揭示太赫兹波与微桥结构中超薄金属吸收膜的作用机制，开发磁控溅射与RIE相结合的方法制备超薄NiCr金属膜；(2)设计NiCr薄膜为双贴片/槽型天线结构，不明显减少吸收面积的同时对特定频率的太赫兹波进行耦合吸收，建立天线耦合微桥结构模型；(3)设计基于RIE表面修饰的金属/介质复合薄膜增大金属吸收层/天线层的有效吸收面积，剖析高比表面积复合薄膜对太赫兹波的增强吸收机理。将上述创新研究与已有微测辐射热计技术积累及平台条件相结合，在构建出较完善的天线耦合复合膜系微桥结构探测太赫兹波的理论模型的基础上，研制出具有高太赫兹波吸收率的微桥探测结构，为阵列化、高性能的太赫兹探测成像器件的研制和应用奠定良好的基础。

This project is focused on the extremely low terahertz (THz) wave absorption of microbolometer with traditional micro bridge structure. A NiCr antenna modified by RIE process is proposed for improvement of THz wave absorption. This project is scheduled to do the following innovative works: (1) exploring the operation mechanism of THz wave radiation and ultrathin metallic film in micro bridge structure and fabricating ultrathin NiCr film by a combination of magnetron sputtering and RIE. (2) designing the NiCr film as dual patch / slot type antenna structure coupled to specific frequency for enhanced absorption without significant reduction of absorption area, and building a theoretical model about antenna-coupled microbolometer. (3) designing a metal/dielectric complex thin film with high specific surface area by surface modification based on RIE process, which increases the effective absorption area of the metal absorption layer and antenna layer, and analyzing the THz wave absorption mechanism of complex thin film with high specific surface area. Combinning those innovative works with former research about microbolometer and fabricating equipment condition, micro bridge structure with high THz wave absorption would be obtained on the basis of building theoretical model of antenna-coupled microbolometer with high specific surface area. This work could promote the research and applicaiton of microbolometer array THz imaging device with high performance.