Investigation of crystal growth mechanisms of Si crystals floating on Si melt and development of crystal growth technique to realize high-quality Si multicrystals

研究硅熔体上漂浮硅晶体的晶体生长机制并开发晶体生长技术以实现高质量硅多晶

• 批准号: 20226001
• 负责人: NAKAJIMA Kazuo
• 金额: $ 95.43万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20226001/
• 关键词: 結晶成長; シリコン; 太陽電池; 多結晶; 結晶欠陥; 浮遊キャスト成長; 浮遊キャスト法; Siバルク多結晶; 亜粒界; ランダム粒界; せん断応力; デンドライト結晶; ファセット成長

We clarified fundamental crystal growth mechanisms of Si from melt such as formation mechanisms of microstructures and crystal defects by using an originally developed crystal growth furnace with in-situ observation system and model crystal growth experiments with purposely designed multi-seed crystals. The newly obtained fundamental knowledge on crystal growth mechanisms has been successfully implemented for development of floating cast method as a novel crystal growth technique to realize high-quality Si multicrystals with controlled microstructures and crystal defects, which will be utilized for high-efficiency solar cells.

我们通过使用独创的带有原位观察系统的晶体生长炉和专门设计的多籽晶的模型晶体生长实验，阐明了硅从熔体中生长的基本晶体机制，例如微观结构和晶体缺陷的形成机制。新获得的晶体生长机制基础知识已成功应用于开发浮铸法作为一种新型晶体生长技术，以实现具有受控微观结构和晶体缺陷的高质量硅多晶，该多晶将用于高效太阳能电池。

项目成果

Impact of defect density in.Si bulk multicrystals on gettering effect of impurities

硅块状多晶缺陷密度对杂质吸杂效果的影响

• 发表时间: 2008
• 期刊: Jpn. J. Appl. Phys 47
• 作者: I. Takahashi;N. Usami;R. Yokoyama;Y. Nose;K. Kutsukake;K. Fujiwara;and K. Nakaiima
• 通讯作者: and K. Nakaiima

Control of microstructures and crystal defects in Si multicrystals grown by the casting method -how to improve the quality of multicrystals to the level of single crystals-

铸造法生长的硅多晶的显微组织和晶体缺陷的控制-如何将多晶的质量提高到单晶的水平-

• 发表时间: 2009
• 作者: K.Nakajima;N.Usami;K.Fujiwara;K.Kutsukake
• 通讯作者: K.Kutsukake

Quantitative Analysis of Defects and Microstructures in Si Multicrystals Using X-ray Diffraction

利用 X 射线衍射定量分析硅多晶中的缺陷和微观结构

• 发表时间: 2009
• 作者: K.Kutsukake;N.Usami;K.Fujiwara;K.Nakajima
• 通讯作者: K.Nakajima

In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

• DOI: 10.1016/j.actamat.2008.01.038
• 发表时间: 2008-06
• 期刊: Acta Materialia
• 影响因子: 9.4
• 作者: K. Fujiwara;K. Maeda;N. Usami;G. Sazaki;Y. Nose;A. Nomura;T. Shishido;K. Nakajima

シリコンのファセットデンドライトの成長機構

硅刻面枝晶的生长机制

• 发表时间: 2009
• 作者: 藤原航三;前田健作;宇佐美徳隆;宇田聡;中嶋一雄
• 通讯作者: 中嶋一雄