Investigation of crystal growth mechanisms of Si crystals floating on Si melt and development of crystal growth technique to realize high-quality Si multicrystals

本文利用自行研制的带有原位观察系统的晶体生长炉和精心设计的多种子晶体模型晶体生长实验，阐明了熔体中硅的基本晶体生长机制，如微观结构和晶体缺陷的形成机制。新获得的晶体生长机理的基础知识已成功地应用于浮式铸造法的发展，作为一种新的晶体生长技术，可以实现具有控制显微结构和晶体缺陷的高质量Si多晶，这将用于高效太阳能电池。

We clarified fundamental crystal growth mechanisms of Si from melt such as formation mechanisms of microstructures and crystal defects by using an originally developed crystal growth furnace with in-situ observation system and model crystal growth experiments with purposely designed multi-seed crystals. The newly obtained fundamental knowledge on crystal growth mechanisms has been successfully implemented for development of floating cast method as a novel crystal growth technique to realize high-quality Si multicrystals with controlled microstructures and crystal defects, which will be utilized for high-efficiency solar cells.