Cavity QED of GaAs quantum double rings

GaAs量子双环的腔QED

• 批准号: 20340080
• 负责人: SAKODA Kazuaki
• 金额: $ 12.23万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20340080/
• 关键词: GaAs; 量子リング; 量子ドット; フォトニック結晶; QED

To give a definite experimental proof of the cavity QED (quantum electrodynamics) effect of GaAs nano particles, we performed self-assembly of nano particles, fabrication of photonic crystal microcavities, characterization by micro spectroscopy, theoretical analysis of electronic states and electromagnetic modes, and studies on relevant applications. We proved the Purcell effect, or acceleration of photon emission, for GaAs nano particles embedded in photonic crystal microcavities with lattice constants around 200 nm. We also achieved high crystal quality by improvement of the self-assembling technique, so we succeeded for the first time in lasing by current injection with GaAs nano particles. In addition, we clearly demonstrated doubly enhanced spontaneous emission due to the small group velocity of photon at photonic band edges.

为了给GaAs纳米粒子的腔QED（quantum electrodynamics）效应提供一个明确的实验证据，我们进行了纳米粒子的自组装、光子晶体微腔的制备、微观光谱表征、电子态和电磁模式的理论分析以及相关应用的研究。我们证明了晶格常数在200 nm左右的光子晶体微腔中嵌入GaAs纳米粒子的珀塞尔效应或光子发射加速。我们还通过改进自组装技术获得了高质量的晶体，因此我们首次成功地用GaAs纳米颗粒通过电流注入产生激光。此外，我们清楚地证明了由于光子在光子带边处的小群速度而导致的双增强自发辐射。

项目成果

Fine structure splitting reduction in droplet epitaxy GaAs quantum dots grown on (111)A surface

• DOI: 10.1088/1742-6596/245/1/012049
• 发表时间: 2010-09
• 作者: M. Abbarchi;T. Kuroda;T. Mano;K. Sakoda

Magneto-optical properties of excitonic complexes in GaAs self-assembled quantum dots

• DOI: 10.1103/physrevb.81.035334
• 发表时间: 2010-01-01
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Abbarchi, M.;Kuroda, T.;Gurioli, M.
• 通讯作者: Gurioli, M.

Doubly enhanced spontaneous emission due to increased photon density of states at photonic band edge frequencies.

• DOI: 10.1364/oe.17.013168
• 发表时间: 2009-07
• 期刊: Optics express
• 影响因子: 3.8
• 作者: K. Kuroda;T. Sawada;T. Kuroda;Kenji Watanabe;K. Sakoda

無歪み系GaAs量子ドットの荷電励起子エネルギー

无应变 GaAs 量子点的带电激子能

• 发表时间: 2011
• 作者: 黒田隆;他
• 通讯作者: 他

Exciton states in quantum tetrapods

量子四足体中的激子态

• 发表时间: 2011
• 作者: S Hoshino;J Otsuki;Y Kuramoto;迫田和彰
• 通讯作者: 迫田和彰