Development and Application of a thin film growth method called nano-channel hetero-epitaxy

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In order to integrate Si optical devices with Si electrical devices, we have developed a hetero-epitaxial growth method called nano-channel hetero-epitaxy in which ultrahigh density nanodots formed on ultrathin SiO2-covered Si substrates are used as seed crystals to grow hetero-thin films with good crystalline qualities on Si substrates. We have grown Ge, GeSn, GaSb and AlGaSb films with good crystalline qualities on Si substrates and investigated their crystalline and light-emitting properties.