Development of the growth technique of truly bulk GaN single crystals

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The seeded growth of bulk GaN single crystals on a small GaN seed was performed by Na flux method. The addition of carbon into Ga/Na solution prevented the formation of polycrystals on a crucible wall, resulted in the promotion of GaN growth on a seed. Sr, Ba and Ca additives changed the growth habit from pyramidal shape to prism shape. In addition, the growth rate on a seed dramatically increased by stirring the solution. Using these techniques, the long-term growth of 600h enabled to obtain the prism-shaped bulk GaN single crystal (9.0mm width and 11mm height, with full widths at half maximum of GaN (10-11) X-ray rocking curve of 20~50 arcsec).