The control of conductivity of bulk GaN crystals which are grown by Na flux method.

Na助熔剂法生长的块体GaN晶体的电导率控制。

• 批准号: 18360149
• 负责人: MORI Yusuke
• 金额: $ 10.55万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360149/
• 关键词: GaN; Single crystal; Doping; Naフラックス; 高純度育成; 不純物ドーピング; バルク; 低転位

The elements of impurities and the origins of impurities were investigated to control conductivity of GaN which were grown by Na flux method. The major impurity incorporated into crystals was turned out to be oxygen. The oxygen concentration in LPE-GaN was ranged from the order of 10^<18> to 10^<19> cm^<-3>. The origin of oxygen was successive corrosion of alumina crucible in the growth period. We searched materials for the crucible which can tolerate Ga-Na mixed metal at high temperature and found the yttrium aluminum garnet (YAG) and yttria to be strong enough for that system. The oxygen concentration in LPE-GaN could be reduced to the order of 10^<16> cm^<-3> using yttria crucible. As for the p-type dopants, it was clarified that Mg element can be doped in the LPE-GaN with the order of 10^<20> cm^<-3>, which is the almost same concentration that adopted in the current devices. Mg doping enabled to increase in the conductivity to the order of 10^6 Ω・cm. On the other hand, Li and Ge could reduce the conductivity to the order of 10^<-2> Ω・cm.Also, even in the Li, Ge or Mg doped system, large bulk GaN single crystal could be obtained by co-doping of carbon which could significantly suppress the growth of poly-crystals.

研究了Na助熔剂法生长GaN的杂质元素和杂质来源，以控制GaN的电导率。结果证明，晶体中的主要杂质是氧。LPE-GaN中的氧浓度范围为约10 μ g<18>至10 μ <19>g cm-3<-3>。氧的来源是氧化铝坩埚在生长期的连续腐蚀。我们寻找了可以在高温下耐受Ga-Na混合金属的坩埚材料，发现钇铝石榴石（YAG）和氧化钇对于该系统足够坚固。使用氧化钇坩埚可以将LPE-GaN中的氧浓度降低到10 - 5cm-3的数量级<16><-3>。对于p型掺杂剂，澄清了Mg元素可以以10 - 5cm-3的数量级掺杂在LPE-GaN中<20><-3>，这与当前器件中采用的浓度几乎相同。Mg掺杂使电导率增加到10^6 Ω·cm的数量级。此外，<-2>即使在Li、Ge或Mg掺杂体系中，碳的共掺杂也可以获得大体积的GaN单晶，这可以显著抑制多晶的生长。

项目成果

炭素添加Na fluxを用いた大型低転位GaN単結晶の育成

使用加碳Na助熔剂生长大型低位错GaN单晶

• 发表时间: 2007
• 作者: M. Tanpo;S. Katsuike;Y. Kitano;M. Imade;N. Miyoshi;F. Kawamura;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
• 通讯作者: T. Sasaki

Naフラックス法における成長速度向上に向けた取り組み

使用Na通量法提高生长速度的努力

• 发表时间: 2007
• 作者: F. Kawamura;Y. Kitano;M. Tanpo;M. Imade;M. Yoshimura;Y. Kitaoka;T. Sasaki;Y. Mori
• 通讯作者: Y. Mori

Drastic decrease in dislocations during the LPE growth of GaN single crystals using Na flux method without any artificial processes

使用Na助熔剂法进行GaN单晶LPE生长过程中位错大幅减少，无需任何人工过程

• 发表时间: 2006
• 期刊: Japanese journal of applied physics (In print)
• 作者: K.Arakawa;et al.;小野 邦彦;F.Kawamura
• 通讯作者: F.Kawamura

The Effect of Additive of Carbon into the Na Flux on the Growth of GaN Single Crystals

Na熔剂中添加碳对GaN单晶生长的影响

• 发表时间: 2007
• 作者: M. Tanpo;Y. Kitano;F. Kawamura;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
• 通讯作者: T. Sasaki

Growth of the Full-Scale GaN Single Crystal Substrate Using Na Flux Method

使用Na助熔剂法生长全尺寸GaN单晶衬底

• 发表时间: 2007
• 作者: F. Kawamura;Y. Kitano;M. Tanpo;N. Miyoshi;M. Imade;M. Yoshimura;Y. Kitaoka;T. Sasaki;Y. Mori
• 通讯作者: Y. Mori