Study on fabrication on semiconducting diamond film by laser ablation

激光烧蚀制备半导体金刚石薄膜的研究

• 批准号: 06805030
• 负责人: MORI Yusuke
• 金额: $ 1.02万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06805030/
• 关键词: semiconducting diamond; AIN; n-type; pulsed laser ablation; nitrogen plasma; cathodoluminescence; oriented growth; N; Al ratio; ワイドギャップ半導体; 窒化アルミニウム; pn接合; ヘテロ接合; プラズマ; ヘテロエピタキシャル; 窒化アルミニュウム; YAGレーザー; 窒化ホウ素; 格子定数

I have tried to fabricate n-type diamond by ion implantation and gas doping with phosphorous. The n-type doping, however, could not be succeeded in this work. So that I have aimed to develop wide gap nitrides, such as AIN because of their possibility of achieving n-type doping and case to grow. The wide gap pnjunction will be realized by the heterostructures between p-type diamond and n-type AIN.In this work, highly oriented AIN thin films have been grown on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. The three different growth ambient, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of an ambient on the film quality. Rutherford backscattering analysis revealed that the N/Al ratios of the films grown in nitrogen plasma and nitrogen gas ambient were estimated to be 1.43 times and 1.37 times as large as that of the film grown in the high vacuum, respectively. This result revealed that the presence of nitrogen-contained ambient during the growth is effective to increase the nitrogen concentration in the AIN films and essential for the growth of high-quality AIN films. Cathodoluminescence study also implied the decrease of oxygen content in the film grown in nitrogen plasma ambient.

我尝试过用离子注入和含磷气体掺杂制备n型金刚石。然而，n型掺杂在这项工作中未能成功。所以我的目标是开发宽间隙氮化物，比如AIN，因为它们有可能实现n型掺杂和生长。p型金刚石与n型AIN之间的异质结构将实现宽间隙的光子结。在这项工作中，利用脉冲激光沉积烧结AIN靶，在Si（100）衬底上生长了高取向的AIN薄膜。为了研究不同生长环境对薄膜质量的影响，采用了真空、氮气和氮气等离子体三种不同的生长环境。卢瑟福后向散射分析表明，在氮气等离子体和氮气环境中生长的膜的N/Al比分别是在高真空中生长的1.43倍和1.37倍。结果表明，生长过程中含氮环境的存在可以有效地提高AIN膜中的氮浓度，对高质量AIN膜的生长至关重要。阴极发光研究还表明，在氮气等离子体环境中生长的薄膜中氧含量降低。

项目成果

Yusuke Mori: "Electrical Properties of Phosphorous-Implanted Homoepitaxial Diamond Films" Trans.Material Research Society. 14B. 1567-1569 (1994)

Yusuke Mori：“磷注入同质外延金刚石薄膜的电性能”跨材料研究协会。

K.Bekku, Y.Mori, N.Eimori, H.Makita, A.Hatta, T.Ito, T.Hirao, T.Sasaki and A.Hiraki: "Growth and characterization of CVD diamond films doped with phosphorous" Proc.4th Int.Conf.New Diamond Sci.& Technol.701-704 (1994)

K.Bekku、Y.Mori、N.Eimori、H.Makita、A.Hatta、T.Ito、T.Hirao、T.Sasaki 和 A.Hiraki：“掺杂磷的 CVD 金刚石薄膜的生长和表征”Proc。

Yusuke Mori: "AIN thin films grown by pulsed laser deposition" Diamond Films & Technology. (in press).

Yusuke Mori：“通过脉冲激光沉积生长的 AIN 薄膜” Diamond Films

Yusuke Mori: "Highly Oriented AIN Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition" Material Research Society. (in press).

Yusuke Mori：“通过等离子体辅助脉冲激光沉积生长的高度定向 AIN 薄膜”材料研究学会。

Yusuke Mori: "Electron affinity of single-crystalline CVD diamond studied by UV synchrotron radiation" Jpn. J. Appl. Phys.33. 6312-6315 (1994)

Yusuke Mori：“通过紫外同步辐射研究单晶 CVD 金刚石的电子亲和力”Jpn。