STUDY OF FERROMAGNETIC SINGLE-ELECTRON TRANSISTORS CONTROLLED BY GATE ELECTRIC FIELDS

报道了一种利用场致发射电流诱导的电迁移方法制备平面型镍基单电子晶体管的新技术。在300K下工作的器件的库仑阻塞电压明显地被栅极电压准周期性地调制，导致在室温下形成多个隧道结的SET。此外，通过施加磁场改变了Ni纳米间隙的电阻，并且在299K和33mV的偏压下显示出约9%的磁电阻（MR）比。这些结果清楚地表明，电迁移过程使我们能够容易和简单地制造平面型镍基SET在室温下工作。

We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by a field emission current. Coulomb blockade voltage of the devices operated at 300K was clearly modulated by the gate voltage quasi-periodically, resulting in the formation of multiple tunnel junctions of the SETs at room temperature. In addition, the resistance of the Ni nanogaps was varied by applying magnetic fields, and magnetoresistance (MR) ratio exhibited approximately 9% at 299K with the bias voltage of 33mV. These results clearly imply that electromigration procedure allows us to easily and simply fabricate planar-type Ni-based SETs operating at room temperature.