Study on nitride-based semiconductor photonic devices with nano-imprint technique

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We have studied on the development and the improvement of device performance of nitride-based semiconductor photonic devices by using nano-imprint lithography technique. We have experimentally confirmed the diffraction effects for the sample with surface periodic structure on GaN surface fabricated by nano-imprint lithography technique. We fabricated the photodetector with this structure, and investigated the fundamental characteristics for the device. We also studied for the LED devices with the periodic structure on the surface and the interface between the GaN and the substrate, and investigated the effects on output light power and the directivility.