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Development of High Performances and Novel Functions in Low-Growth Temperature (Cu, C) Superconducting Film by Controlling Multi-layer Structure

通过控制多层结构开发低生长温度（Cu，C）超导薄膜的高性能和新功能

基本信息

批准号：
20560305
负责人：
TERADA Norio
金额：
$ 3万
依托单位：
Kagoshima University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2008
资助国家：
日本
起止时间：
2008 至 2010
项目状态：
已结题

项目摘要

Thin film process and enhancement of properties of (Cu, C)-system [(Cu,C)Ba_2Ca_<n-1>Cu_nO_x:(Cu,C)-12(n-1)n] high temperature superconductors have been studied. Contrary to the necessity of high temperature and high pressure for fabrication of bulk ceramics of this system, thin films of (Cu,C)-1201 phase have successfully synthesized by utilizing pulsed laser deposition on SrTiO_3 substrate under CO_2 mixed atmosphere. The (Cu,C)-1201 films show technological merits of the low growth temperature of 500～600 ℃ and superconducting critical temperature about 50 K which is sufficient to applications of high-speed digital circuits. Though surface roughness of the 1201 films directly on the substrate exceeded c-axis lattice parameter of this phase, it has been improved up to sub-nano meter level by the insertion of SrCuO_2 buffer with infinite layer structure between the 1201 film and the substrate. The (Cu,C)-1201/SrCuO_2 structures exhibit similar superconducting properties. These results mean that it is satisfied the necessary conditions for the investigation of the effect of multi-stacking of 1201 and related layers on superconducting properties of it. In the present study, remarkable enhancements of critical temperature are achieved in [CaCuO_2/(Cu,C)-1201]×N (N : repetition number of fundamental structure) multi-layered structure. T_<c-onset> and T_<c(ρ=0)> reach～100 K and >70 K, respectively. It is also noteworthy that the growth temperature of such high-T_c specimens still stays around 500℃. Structural analysis of the high-T_c specimens has revealed the strain at their hetero-interfaces is the main origin of the enhancement of superconductivity.The achievements mentioned above shows that the novel superconducting film withtechnological merits : high T_c and low growth temperature, without toxic element has developed by adopting the hetero-interface effect to (Cu,C)-1201 layer, which also means the objective of this research is successfully achieved.

研究了(Cu,C)系[(Cu,C)Ba_2Ca_<n-1>Cu_nO_x:(Cu,C)-12(n-1)n]高温超导体的薄膜工艺及其性能增强。与该系统制备块体陶瓷需要高温高压的情况相反，在CO_2混合气氛下，利用脉冲激光沉积在SrTiO_3基底上成功合成了(Cu,C)-1201相薄膜。 (Cu,C)-1201薄膜具有500～600℃的低生长温度和50K左右的超导临界温度的技术优点，足以满足高速数字电路的应用。虽然直接位于衬底上的1201薄膜的表面粗糙度超过了该相的c轴晶格参数，但通过在1201薄膜和衬底之间插入具有无限层结构的SrCuO_2缓冲剂，其表面粗糙度已改善至亚纳米水平。 (Cu,C)-1201/SrCuO_2结构表现出类似的超导特性。这些结果意味着满足了研究1201及相关层的多层堆叠对其超导性能影响的必要条件。在本研究中，[CaCuO_2/(Cu,C)-1201]×N（N：基本结构的重复数）多层结构实现了临界温度的显着提高。 T_<c-onset>和T_<c(ρ=0)>分别达到～100 K和>70 K。还值得注意的是，这种高T_c样品的生长温度仍然保持在500℃左右。对高T_c样品的结构分析揭示了其异质界面处的应变是超导增强的主要根源。上述成果表明，利用(Cu,C)-1201层的异质界面效应，研制出了具有高T_c、低生长温度、不含有毒元素的新型超导薄膜，这也意味着本研究的目标已经成功实现。实现了。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

In-situ characterization of transport properties of superconducting (Cu, C)-1201 films

超导 (Cu, C)-1201 薄膜输运特性的原位表征

DOI：
发表时间：
2009
期刊：
Journal of Physics Conf.Series vol.150
影响因子：
0
作者：
K.Kikunaga;T.Yamamoto;M.Mitsunaga;Y.Mahara;Y.Tanaka;N.Kikuchi;K.Tokiwa;T.Watanabe;N.Terada
通讯作者：
N.Terada

Synthesis of suoerconducting (Cu, C)-Ba-O films on SuCuO_2 buffer by pulsed laser deposition

脉冲激光沉积在SuCuO_2缓冲层上合成超导(Cu,C)-Ba-O薄膜

DOI：
发表时间：
2009
期刊：
J.Phys.Conf.Series vol.150
影响因子：
0
作者：
T.Yamamoto;K.Kikunaga;M.Mitsunaga;T.Okuda;K.Obara;N.Kikuchi;Y.Tanaka;K.Tokiwa;T.Watanabe;N.Terada
通讯作者：
N.Terada

Synthesis of superconducting (Cu, C)-Ba-O films on SrCuO2 buffer by pulsed laser deposition

脉冲激光沉积在 SrCuO2 缓冲层上合成超导 (Cu, C)-Ba-O 薄膜