Development of atmospheric-pressure plasma applied mist chemical vapor deposition and ZnO thin film growth under room temperature using the method.
Development of atmospheric-pressure plasma applied mist chemical vapor deposition and ZnO thin film growth under room temperature using the method.
批准号:
20860081
负责人:
KAWAHARAMURA Toshiyuki
金额:
$2.1万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (Start-up)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009
中文摘要
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英文摘要
A novel low temperature thin-film fabricating method was created and developed using mist chemical vapor deposition with atmospheric-pressure plasma. In the development, the dynamics of the mist droplets at a reaction area were analyzed and the reaction of the mist rapidly proceeded with high reaction efficiency was revealed. Moreover, a novel etching technique using the mist was developed as a related technology. The developed methods can save the usages of chemical resources and total energy.
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ミストエッチング装置及びミストエッチング方法
雾刻设备及雾刻方法
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[]
通讯作者:
ミスト技術の応用 -薄膜作製技術への挑戦-
雾化技术的应用-对薄膜生产技术的挑战-
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[西政好, 濱田秀則, 佐川康貴, 川端雄一郎, 川原村敏幸]
通讯作者:
川原村敏幸
ミスト技術の応用-薄膜作製技術への挑戦-
雾化技术的应用 - 薄膜生产技术的挑战 -
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Nakashima S., Sugioka K., Midorikawa K., 川原村敏幸, 川原村敏幸]
通讯作者:
川原村敏幸
ミスト法を用いた新規エッチング手法の開発
使用雾法的新蚀刻方法的开发
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Nakashima S., Sugioka K., Midorikawa K., 川原村敏幸]
通讯作者:
川原村敏幸
Basic research on nanostructure control for the fabrication of ultra-wide bandgap oxide quantum devices by mist CVD
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批准号:18H01873
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.4万
-
财政年份:2018
-
负责人:KAWAHARAMURA Toshiyuki
-
依托单位:
Application technology development harnessing mist characteristics-The mist method for fabrication technology of electronic devices-
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批准号:22760232
-
项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.75万
-
财政年份:2010
-
负责人:KAWAHARAMURA Toshiyuki
-
依托单位:
海外基金