Application technology development harnessing mist characteristics-The mist method for fabrication technology of electronic devices-
Application technology development harnessing mist characteristics-The mist method for fabrication technology of electronic devices-
批准号:
22760232
负责人:
KAWAHARAMURA Toshiyuki
金额:
$2.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011
中文摘要
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英文摘要
It succeeded in clarifying the mechanism and behavior about the mist method. As a result, any researches have been stepped up. Moreover, the index of non-vacuum process conversion of the TFT fabrication process was demonstrated. Application development of the mist CVD to the electronic device fabrication technology was promoted.
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DOI:
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发表时间:
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影响因子:
--
作者:
[]
通讯作者:
ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
掺杂剂的高结晶导电α型氧化镓薄膜及其制备方法
DOI:
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发表时间:
2011
期刊:
影响因子:
--
作者:
[]
通讯作者:
Study on the behavior of mist droplets and the mechanism in the mist Chemical Vapor Deposition
雾气化学气相沉积中雾滴行为及机理研究
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T. Kawaharamura, S. Fujita, and T. Hirao]
通讯作者:
and T. Hirao
A Novel Solution-based Vapor-etching Technique : Mist-etching
基于溶液的新型气相蚀刻技术:雾蚀刻
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[川原村敏幸(Toshiyuki Kawaharamura), 平尾孝(Takashi Hirao)]
通讯作者:
平尾孝(Takashi Hirao)
ミストCVD法によるIGZO TFTの作製
雾气CVD法制造IGZO TFT
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[川原村敏幸, 王大鵬, 古田守]
通讯作者:
古田守
共 8 条
Basic research on nanostructure control for the fabrication of ultra-wide bandgap oxide quantum devices by mist CVD
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批准号:18H01873
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.4万
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财政年份:2018
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负责人:KAWAHARAMURA Toshiyuki
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依托单位:
Development of atmospheric-pressure plasma applied mist chemical vapor deposition and ZnO thin film growth under room temperature using the method.
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批准号:20860081
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项目类别:Grant-in-Aid for Young Scientists (Start-up)
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资助金额:$2.1万
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财政年份:2008
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负责人:KAWAHARAMURA Toshiyuki
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依托单位:
海外基金