Electrical Characteristics of ss-FeSi_2 thin films on semi-insulating SiC substrates

采用铁和硅共溅射的方法，在碳化硅(3C-SiC)缓冲衬底(100)和(111)衬底上外延生长了(100)取向的ss-FeSi2薄膜。这些外延薄膜在(100)3C-SiC层和(111)3C-SiC层上分别具有双畴和三畴结构。霍尔测量表明，在半绝缘4H-SiC上生长的ss-FeSi2薄膜在295K时具有p型电导，霍尔浓度为1.5×1018 cm~(-3)。在295K和30K下，霍尔迁移率分别为12和140cm2/vs t，表明外延生长的ss-FeSi2薄膜具有较高的晶体质量。

(100)-oriented ss-FeSi_2 films were expitaxially grown on a SiC (3C-SiC)-buffered Si(100) and (111) substrate by co-sputtering iron and silicon. These epitaxial films had double-domain and triple-domain structure on (100)3C-SiC and (111)3C-SiC layer, respectively. The Hall measurements revealed that the epitaxial ss-FeSi_2 films on semi-insulating 4H-SiC showed p-type conductivity with the hall concentration of 1.5×1018 cm^3 at 295K. The Hall mobility was 12 and 140 cm^2/Vs t at 295K and 30K, respectively, indicating the high crystal quality of the epitaxial ss-FeSi_2 films.