Iron disilicide photochemical diode with Au-promoter

带 Au 促进剂的二硅化铁光化学二极管

• 批准号: 23560018
• 负责人: AKIYAMA Kensuke
• 金额: $ 3.33万
• 依托单位: Kanagawa Industrial Technology Center
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560018/
• 关键词: 鉄シリサイド; 光化学ダイオード; 可視光; 光触媒; 助触媒

Semiconducting iron disilicide (beta-FeSi2) has been attracting a great deal of attention as a photo-detector and Si-based light emitter operating at wavelengths suitable for optical fiber communications. This is because beta-FeSi2 has a band gap less than 0.80 eV and a very large optical absorption coefficient over 1E+5 /cm at 1 eV. Moreover, this semiconducting material is composed of the elements that are naturally abundant and less toxic than the elements used in conventional compound semiconductors.In this report, we report on the novel fabrication method of beta-FeSi2 photochemical diode with Au electrode on the surface of Si powder by using metal-organic chemical vapor deposition (MOCVD) method which is general in semiconductor process technology. Moreover, we repot on the hydrogen evolution over this photochemical diode under irradiation of not only UV but also visible light from formaldehyde aqueous solution.

半导体二硅化铁（β-FeSi 2）作为在适合于光纤通信的波长下操作的光检测器和Si基光发射器已经吸引了大量关注。这是因为β-FeSi 2具有小于0.80 eV的带隙和在1 eV处超过1 E +5 /cm的非常大的光吸收系数。此外，这种半导体材料是由天然丰富的元素和毒性比传统的化合物semiconductor.In本报告中，我们报告的新的制造方法β-FeSi 2光化学二极管的表面上的Au电极的Si粉末，使用金属有机化学气相沉积（MOCVD）方法，这是在半导体工艺技术的通用。此外，我们还报道了甲醛水溶液在紫外光和可见光照射下在该光化学二极管上的析氢反应。

项目成果

Evaluation of β-FeSi2/Si-interface using Ag-coating on Si surface

使用 Si 表面镀银评估 β-FeSi2/Si 界面

• DOI: 10.1002/pssc.201300331
• 发表时间: 2013
• 期刊: Physica status solidi (c)
• 作者: K. Akiyama;S. Motomura;G. Hayashi;H. Funakubo;and M. Itakura
• 通讯作者: and M. Itakura

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银包硅上 β-FeSi_2 的光致发光增强

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