Mesoplasma lateral epitaxy for next generation giant electronics

高速低温外延的中等离子体环境具有较低的电子温度和较高的离子密度。原子氢在空间上也以较高的浓度均匀分布。纳米团簇是中质外延的生长前体，不受氢分压变化的影响。这使我们能够沉积高质量的外延薄膜，而不需要在沉积前对衬底进行特殊的前处理，这表明它具有大面积外延沉积的优势。

Mesoplasma environment for high rate and low temperature epitaxy was revealed to possess low electron temperature and high ion density characteristics. Atomic hydrogen is also distributed at high concentration uniformly spatially. Nanoclusters, growth precursors for mesoplasma epitaxy, are not affected by a change in the hydrogen partial pressure. These enable us to deposit high quality epitaxial films with no special pre-treatment for substrate prior to deposition, suggesting its advantageous characteristics for large area epitaxial deposition.