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Perfect Control Electronic Device Application of Organic Crystal Growth at Soild/Liquid Interface and device applications

Perfect Control Electronic Device Application of Organic Crystal Growth at Soild/Liquid Interface and device applications
固/液界面有机晶体生长的完美控制电子器件应用及器件应用
批准号:
20760485
负责人:
FUKIDOME Hirokazu
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009

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中文摘要
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英文摘要
In this project, we have studied the crystal-growth process of rubrene and graphene at solid/liquid interfaces by using atomic-scale characterization methods, for instance, atomic force microscopy. Almost perfect single crystal of rubrene could be obtained and be used in device applications. On the other hand, high-quality graphene crystalline films could be formed on silicon substrates, and the control of the electronic properties of the graphene film has been established.
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会议论文
Epitaxial Graphene on Silicon Substrate
硅衬底上外延石墨烯
DOI: --
发表时间: 2010
期刊: Journal of Physics D 43(印刷中)
影响因子: --
作者: [末光眞希, 吹留博一]
通讯作者: 吹留博一
DOI: 10.1143/jjap.49.01ah03
发表时间: 2010-01-01
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
影响因子: 1.5
作者: [Fukidome, Hirokazu, Miyamoto, Yu, Suemitsu, Maki]
通讯作者: Suemitsu, Maki
Raman Scattering of Epitaxial Graphene Formed on Silicon Substrates
硅衬底上形成的外延石墨烯的拉曼散射
DOI: --
发表时间: 2009
期刊: e-Journal of Surface Science and Nanotechnology 3
影响因子: --
作者: [Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tankashi Ito, Maki Suemitsu]
通讯作者: Maki Suemitsu
Si(111), Si(100), Si(110)基板表面上へのグラフェン・オン・シリコンの形成
在 Si(111)、Si(100) 和 Si(110) 衬底表面上的硅上形成石墨烯
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [吹留博一, 宮本優, 半田浩之, 齋藤英司, 末光眞希]
通讯作者: 末光眞希
13
    Nanoscale control of physical properties of grapheen by site-selective epitaxy of graphene using substrate microfabrication
    • 批准号:
      23560003
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.49万
    • 财政年份:
      2011
    • 负责人:
      FUKIDOME Hirokazu
    • 依托单位:
    海外基金