Perfect Control Electronic Device Application of Organic Crystal Growth at Soild/Liquid Interface and device applications
Perfect Control Electronic Device Application of Organic Crystal Growth at Soild/Liquid Interface and device applications
批准号:
20760485
负责人:
FUKIDOME Hirokazu
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009
中文摘要
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英文摘要
In this project, we have studied the crystal-growth process of rubrene and graphene at solid/liquid interfaces by using atomic-scale characterization methods, for instance, atomic force microscopy. Almost perfect single crystal of rubrene could be obtained and be used in device applications. On the other hand, high-quality graphene crystalline films could be formed on silicon substrates, and the control of the electronic properties of the graphene film has been established.
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Epitaxial Graphene on Silicon Substrate
硅衬底上外延石墨烯
DOI:
--
发表时间:
2010
期刊:
Journal of Physics D 43(印刷中)
影响因子:
--
作者:
[末光眞希, 吹留博一]
通讯作者:
吹留博一
DOI:
10.1143/jjap.49.01ah03
发表时间:
2010-01-01
期刊:
JAPANESE JOURNAL OF APPLIED PHYSICS
影响因子:
1.5
作者:
[Fukidome, Hirokazu, Miyamoto, Yu, Suemitsu, Maki]
通讯作者:
Suemitsu, Maki
Raman Scattering of Epitaxial Graphene Formed on Silicon Substrates
硅衬底上形成的外延石墨烯的拉曼散射
DOI:
--
发表时间:
2009
期刊:
e-Journal of Surface Science and Nanotechnology 3
影响因子:
--
作者:
[Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tankashi Ito, Maki Suemitsu]
通讯作者:
Maki Suemitsu
Si(111), Si(100), Si(110)基板表面上へのグラフェン・オン・シリコンの形成
在 Si(111)、Si(100) 和 Si(110) 衬底表面上的硅上形成石墨烯
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[吹留博一, 宮本優, 半田浩之, 齋藤英司, 末光眞希]
通讯作者:
末光眞希
Epitaxial growth of graphene on various silicon substrates
石墨烯在各种硅衬底上的外延生长
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[吹留博一, 宮本優, 半田浩, 高橋良太, 今泉京, 末光眞希]
通讯作者:
末光眞希
共 13 条
Nanoscale control of physical properties of grapheen by site-selective epitaxy of graphene using substrate microfabrication
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批准号:23560003
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.49万
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财政年份:2011
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负责人:FUKIDOME Hirokazu
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依托单位:
海外基金