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The electron-phonon interaction resulting surface modification triggered by the low-energy highly-charged-ion

The electron-phonon interaction resulting surface modification triggered by the low-energy highly-charged-ion
低能高电荷离子引发的电子-声子相互作用导致表面改性
批准号:
21510108
负责人:
NAKAGAWA Sachiko
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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中文摘要
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英文摘要
The low-energy highly charged ion(HCI) produces hillocks on a solid surface, which are mesa-like protrusions as the result of electronic excitation due to HCI. Our aim has been to make it clear how generally the electron-phonon interaction can explain the formation mechanism, for a wide range of target materials. The first step of synergetic reaction of target atoms may be to form the fast phonon, which is already known in semimetal and semiconductor. This is the optical phonon where intraplane motion of atoms is characteristic. The second step is the acoustic phonon caused by the entering HCI. These two types of successive phonons may produce the hillocks by a low-energy HCI, at least in the case of a semimetal.
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会议论文
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DOI: --
发表时间: 2009
期刊: Proc.of 11th Symposium on Accelerator and Related Technology for Application 11
影响因子: --
作者: [中川幸子, 酒井裕也]
通讯作者: 酒井裕也
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Y.Suzuki, M.Okada, H.Mimura, Y.Inoue, S. T. Nakagawa]
通讯作者: S. T. Nakagawa
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [中川幸子, H.J.Whitlow, G.Betz]
通讯作者: G.Betz
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [小山真弘, 中川幸子]
通讯作者: 中川幸子
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