Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
批准号:
21560031
负责人:
SATO Tetsuya
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
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英文摘要
We synthesized carbon films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb methane gases. The concentration of hydrogen(C_H) in carbon films were very low(1% to 6 at.%). The value of optical band gap changed from 0. 9 eV to 2. 5 eV. The values of spin density(Ns) decreased with increasing C_H and less than 10^<18> cm-^3 were found for the films with low sp^2 content.
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低速电子束辐照低温合成碳膜的ESR结构缺陷评价
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[S. Kaneko, T. Nagano, K. Akiyama, T. Ito, M. Yasui, Y. Hirabayashi, H. Funakubo, and M. Yoshimoto, 小林直樹,山田竜太郎,年森隆明,森田直樹,佐藤哲也,有元圭介,山中淳二,中川清和]
通讯作者:
小林直樹,山田竜太郎,年森隆明,森田直樹,佐藤哲也,有元圭介,山中淳二,中川清和
低速電子線誘起反応と水素原子の低温トンネル反応による炭素薄膜の極低温合成
利用慢电子束诱导反应和氢原子低温隧道反应低温合成碳薄膜
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[佐藤哲也]
通讯作者:
佐藤哲也
メタン凝縮層からの炭素薄膜極低温合成
甲烷凝结层低温合成碳薄膜
DOI:
--
发表时间:
2010
期刊:
New Diamon
影响因子:
--
作者:
[佐藤哲也, 伊東佑将, 森田直樹, 井草裕志, 小林憲明, 中川清和, 佐藤昇司]
通讯作者:
佐藤昇司
CH_4 Ar固体薄膜への低速電子線衝撃: Arマトリックス単離赤外分光法による反応解析
CH_4 慢电子束对 Ar 固体薄膜的影响:使用 Ar 基质隔离红外光谱进行反应分析
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[児玉和也, et al.., 佐藤哲也]
通讯作者:
佐藤哲也
Synthesis of Amorphous Germane by Tunneling Reactions of Hydrogen Atoms with van der Waals GeH_4 Films at Cryogenic Temperatures
低温氢原子与范德华GeH_4薄膜隧道反应合成非晶锗烷
DOI:
--
发表时间:
2009
期刊:
Jpn.J.Appl.Phys. 48
影响因子:
--
作者:
[Norihito Sogoshi, S.Sato, H.Takashima, T.Sato, K.Hiraoka]
通讯作者:
K.Hiraoka
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