Reactive Sputtering of Oxygen-Free Metal Nitride Films : Oxygen Incorporation and Effect on Electrical Properties

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Oxygen incorporation mechanism during reactive sputtering of titanium nitride was studied. Deposition condition was 2-5 W/cm^<2> and 0.05-0.2 nm/s. High purity films could be obtained in a partial pressure of less than 1×10^<-5> Pa of O_2.Introduction of O_2 beyond a partial pressure of 1×10^<-4> Pa traces of O was detected in the film. With increasing the discharge power, the gettering of residual O_2 by sputtered Ti atoms worked effectively to obtain nitride films of high purity. The pulse sputtering method was found very effective under the low power operation compared to the DC sputtering, but as the power was increased the efficiency of sputtering in the pulse method slowed down approaching to that of the DC sputtering.