Reactive Sputtering of Oxygen-Free Metal Nitride Films : Oxygen Incorporation and Effect on Electrical Properties

无氧金属氮化物薄膜的反应溅射：氧的掺入及其对电性能的影响

• 批准号: 21560054
• 负责人: BABA Shigeru
• 金额: $ 3万
• 依托单位: Seikei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560054/
• 关键词: 反応性スパッタリング; 窒化チタン; パルススパッタリング; 高純度窒化物薄膜; 大電力パルススパッタ; 高純度金属窒化物; モード遷移; 酸窒化物; 窒化物薄膜

Oxygen incorporation mechanism during reactive sputtering of titanium nitride was studied. Deposition condition was 2-5 W/cm^<2> and 0.05-0.2 nm/s. High purity films could be obtained in a partial pressure of less than 1×10^<-5> Pa of O_2.Introduction of O_2 beyond a partial pressure of 1×10^<-4> Pa traces of O was detected in the film. With increasing the discharge power, the gettering of residual O_2 by sputtered Ti atoms worked effectively to obtain nitride films of high purity. The pulse sputtering method was found very effective under the low power operation compared to the DC sputtering, but as the power was increased the efficiency of sputtering in the pulse method slowed down approaching to that of the DC sputtering.

研究了氮化钛反应溅射过程中的含氧机理。沉积条件为2 ~ 5 W/cm^<2>, 0.05 ~ 0.2 nm/s。在O_2分压小于1×10^<-5> Pa的条件下，可以得到高纯度的膜。在分压1×10^<-4> Pa以上引入O_2，在膜中检测到O的痕迹。随着放电功率的增大，溅射Ti原子对残余O_2的吸除效果显著，获得了高纯度的氮化膜。与直流溅射相比，脉冲溅射在低功率下是非常有效的，但随着功率的增加，脉冲溅射的效率逐渐降低，接近于直流溅射的效率。

项目成果

Structural Properties of Island Films of Indium on Si(111) and the Sputter-Etching Profile

Si(111)基铟岛膜的结构特性及溅射刻蚀曲线

• 发表时间: 2011
• 期刊: 成蹊大学理工学研究報告
• 作者: S. Baba;M. Iozaki;S. Sato;T. Nakano
• 通讯作者: T. Nakano

Structure modification of films de-posited by HiPIMS with target bias voltage during pulse-off period

脉冲关闭期间使用目标偏置电压的 HiPIMS 沉积薄膜的结构修改

• 发表时间: 2010
• 作者: N. Hirukawa;R. Hara;T. Nakano;S. Baba
• 通讯作者: S. Baba

異種材料界面の測定と評価技術(監修:石井淑夫)第13章2節付着の測定法と評価

不同材料界面的测量和评价技术（石井义夫指导）第13章第2节附着力的测量方法和评价

• 发表时间: 2012
• 作者: T.Nakano;C.Murata;S.Baba;馬場茂(分担);馬場茂(分担執筆)
• 通讯作者: 馬場茂(分担執筆)

Electrical breakdown characteristics of MgO films deposited by RF magnetron sputtering and its dependence on process gas pressure

射频磁控溅射沉积 MgO 薄膜的电击穿特性及其对工艺气压的依赖性

• 发表时间: 2011
• 作者: R. Kosone;Y. Nakagawa;K. Arai;T. Nakano;S. Baba
• 通讯作者: S. Baba

Electrical breakdown characteristics of MgO films deposited by RF magnetron dputtering and its dependence on process gas pressure

射频磁控溅射沉积 MgO 薄膜的电击穿特性及其对工艺气压的依赖性

• 发表时间: 2011
• 作者: R.Kosone;Y.Nakagawa;K.Arai;T.Nakano;S.Baba
• 通讯作者: S.Baba