Microscopic theory of light emission from semiconductor quantum dots in microcavities

微腔半导体量子点发光的微观理论

• 批准号: 5380223
• 负责人: Professor Dr. Frank Jahnke
• 金额: --
• 依托单位: Institut für Theoretische Physik (ITP)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2002
• 资助国家: 德国
• 起止时间: 2001-12-31 至 2009-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5380223?language=en
• 关键词: Microscopic; theory; light; emission; semiconductor

Semiconductor microcavities have been successfully used in the past decade to study fundamental light-matter effects. Previous investigations mainly used quantum wells as active material and Bragg mirrors for a one-dimensional cavity. Our goal is to extend these investigations in two directions: i) In quantumwell nanostructures, the intrinsic interaction processes of carriers (especially the Coulomb interaction) dominate also the light-matter interaction. The use of semiconductor quantum dots for the active material allows to modify these interaction processes and the discrete nature of the electronic states is the key for new light-matter interaction effects involving, e.g., single or few photons. ii) A three-dimensional photonic confinement will be necessary to realize the strong-coupling regime with quantum dots. Furthermore, the three-dimensional photon confinement strongly increases the spontaneous emission coupling which enhances quantum effects in the light emission. A microscopic theory will be used to study the emission properties of quantum dots in semiconductor microcavities. Starting from the electronic states of the quantum dots, electronic relaxation processes and their influence on the excitonic properties (in the low-excitation regime) and on the optical gain (under high-excitation conditions) will be studied. Calculations of the three-dimensional mode structure of semiconductor microcavities will be used to determine the altered spontaneous emission properties in the weak-coupling regime. Furthermore, within a quantum mechanical theory of the light-matter interaction, statistical properties of the light-emission will be investigated. For large spontaneous-emission coupling intensity-intensity correlations in the coupled cavity--quantum-dot system will be studied. In the weak excitation-limit quantumoptical effects like the creation of entangled photons for the biexciton-exciton transition will be analyzed in direct collaboration with the experimental investigations of our research group.

在过去的十年中，半导体微腔已成功使用，以研究基本的轻质效果。先前的研究主要使用量子孔作为活性材料和Bragg镜子，用于一维腔。我们的目标是将这些研究扩展到两个方向：i）在量子韦尔纳米结构中，载体的内在相互作用过程（尤其是库仑相互作用）也占主导地位。在活动材料中使用半导体量子点可以修改这些相互作用过程，电子状态的离散性质是涉及单个或几个光子的新的光 - 物质相互作用效应的关键。 ii）必须使用三维光子限制来实现与量子点的强耦合方案。此外，三维光子限制强烈增加了自发发射耦合，从而增强了光发射中的量子效应。微观理论将用于研究半导体微腔中量子点的发射特性。从量子点的电子状态开始，电子弛豫过程及其对激子特性的影响（在低兴奋性方面）和光学增益（在高激发条件下）。半导体微腔的三维模式结构的计算将用于确定弱耦合制度中自发发射特性的改变。此外，将在光 - 摩擦相互作用的量子机械理论中，将研究光发射的统计特性。对于耦合腔中的大型自发发射耦合强度相关性，将研究量子点系统。在弱激发限制的量子效应中，例如为Biexciton-Exciton过渡创建纠缠光子，将与我们的研究小组的实验研究直接合作。