Configuration-picture-description of carrier scattering in semiconductor quantum dots

半导体量子点中载流子散射的配置-图片-描述

基本信息

批准号：
244545680
负责人：
Professor Dr. Frank Jahnke
金额：
--
依托单位：
Institut für Theoretische Physik (ITP)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2014
资助国家：
德国
起止时间：
2013-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/244545680?language=en
关键词：
Configuration picture description carrier scattering

项目摘要

Semiconductor quantum dots are currently being used as active material for a multitude of applications in novel optoelectronic devices. This ranges from conventional semiconductor lasers, amplifiers, and modulators to sources of single photons and entangled photon pairs, which are key components for quantum information technologies. Strong application potential and numerous advantages over established active materials have led to high experimental and theoretical research activity in this field. For practical purposes, scattering processes play a central role: They provide carriers in the optically active electronic states and determine the decoherence of optical transitions. The efficiency of carrier scattering for particular excitation conditions sets intrinsic limitations for devices, such as saturation of the emission, modulation rates, and the operative temperature regime. The strength of decoherence directly determines the emission line widths, coherence properties, degrees of entanglement, and other emission properties.Previous theoretical models for the description of scattering processes and carrier correlations in semiconductor nanostructures have used single-particle populations, or they were based on the approximate expansion of a hierarchy of expectation values. Particularly in quantum dots, however, the three-dimensional carrier confinement, and the comparatively small number of electronic configurations, puts a much stronger emphasis on electronic correlation effects. This places currently used methods in a new light and questions their applicability under certain excitation conditions, as demonstrated in current publications.The scope of this project comprises a configuration-based description of charge carrier scattering processes in quantum dots, its numerical implementation, as well as a direct collaboration between theory and experiment to evaluate the results and provide new impulses. Starting point are the single-particle states that lead, in combination with the Coulomb interaction, to the multi-exciton configurations. Scattering processes with carriers in adjacent continuum states, as well as the interaction between carriers and phonons, are formulated in terms of these configurations. This undertaking will bring together expertise from non-equilibrium Green's function quantum-kinetic models and the correlation-based descriptions of quantum-optical effects.

半导体量子点目前被用作新型光电设备中多种应用的活性材料。从传统的半导体激光器，放大器和调节器到单个光子和纠缠光子对的来源，这是量子信息技术的关键组成部分。强大的应用潜力和众多优势比已建立的活性材料导致了该领域的实验和理论研究活动。出于实际目的，散射过程起着核心作用：它们在光学活性电子状态下提供载体，并确定光学转变的反谐效。载体散射对特定激发条件的效率设置了设备的内在局限性，例如发射饱和，调制速率和手术温度状态。消极的强度直接决定了发射线的宽度，相干性能，纠缠程度和其他发射属性。用于描述半导体纳米结构中散射过程和载体相关性的预览理论模型使用了单个颗粒群，或者它们是基于预期的近似值的近似值。然而，特别是在量子点中，三维载体限制以及相对较少的电子配置使人们更加强调电子相关效应。如当前出版物所示，该地方目前在新的光线下使用了方法，并质疑其在某些激发条件下的适用性。该项目的范围包括基于配置的量子载流子散射过程的描述，其数值实施，其数值实施以及理论与实验之间的直接协作，以评估结果并提供新的冲动。起点是与库仑相互作用结合使用的单粒子状态，将其归为多exciton配置。在相邻的连续体状态中使用载体的散射过程，以及载体和声子之间的相互作用，以这些配置为例。这项承诺将从非平衡绿色的功能量子量模型以及基于相关的量子光学效应的描述中汇总出专业知识。

项目成果

期刊论文数量（7）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Coulomb-assisted cavity feeding in nonresonant optical emission from a quantum dot

量子点非谐振光发射中的库仑辅助腔馈电

DOI：
10.1103/physrevb.89.161302
发表时间：
2014
期刊：
Physical Review B
影响因子：
3.7
作者：
M. Florian;P. Gartner;A. Steinhoﬀ;C. Gies;F. Jahnke
通讯作者：
F. Jahnke

Scattering-induced dephasing of many-particle transitions in semiconductor quantum dots

DOI：
10.1007/s00340-015-6296-5
发表时间：
2016-01-01
期刊：
APPLIED PHYSICS B-LASERS AND OPTICS
影响因子：
2.1
作者：
Florian, Matthias;Steinhoff, Alexander;Jahnke, Frank
通讯作者：
Jahnke, Frank

Neutral and charged biexciton-exciton cascade in near-telecom-wavelength quantum dots

DOI：
10.1103/physrevb.94.045303
发表时间：
2016-07-08
期刊：
PHYSICAL REVIEW B
影响因子：
3.7
作者：
Kettler, Jan;Paul, Matthias;Jahnke, Frank
通讯作者：
Jahnke, Frank

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

隧道注入半导体激光器结构设计和相互作用过程的相互作用

DOI：
10.1103/physrevb.98.165431
发表时间：
2018
期刊：
Physical Review B
影响因子：
3.7
作者：
S. Michael;M. Lorke;M. Cepok;C. Carmesin;F. Jahnke
通讯作者：
F. Jahnke

Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier

1 55 μm 隧道注入量子点半导体光放大器中的载流子动力学

DOI：
10.1103/physrevb.98.125307
发表时间：
2018
期刊：
2018 IEEE International Semiconductor Laser Conference (ISLC)
影响因子：
0
作者：
I. Khanonkin;G. Eisenstein;M. Lorke;S. Michael;F. Jahnke;A. K. Mishra;J. P. Reithmaier
通讯作者：
J. P. Reithmaier