Ultra-High Speed Analog/Digital Integrated Circuits Using InAs Nanowires

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By using a field-assisted self-assembly technique, we have succeeded in placing InAs nanowires on an IC substrate with a good controllability of position and direction. A simple sample-and-hold(S/H) circuit is then fabricated by applying the technique, and a successful S/H operation is obtained. Furthermore, a high-speed and high-resolution S/H circuit is proposed based on circuit simulations that use InAs nanowire HFET device parameters extracted from high-frequency S-parameters.