Ultra-high speed opto-electronic devices

超高速光电器件

• 批准号: 21560365
• 负责人: TAKANASHI Yoshifumi
• 金额: $ 3.41万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560365/
• 关键词: 電子デバイス; 集積回路; 光検出デバイス; III-V化合物半導体; 超高速応答; Auger再結合

We have fabricated HEMT's with a strained InGaAs, whose mole fraction is close to that of InAs, as the channel have been fabricated and characterized high-frequency performances using a network analyser. HEMT's with the gate length of 0.1μm exhibited a current cut-off frequency(fT) research ranging over 200 GHz. We have also fabricated MSM-PD's with a strained InGaAs channel and characterized the optical response using a fiber laser with a bandwidth of 400 femt-seconds. MSM-PD's with a L & S of 0.2/0.6μm exhibited a pulse width less than 20 psec. This is because the strained InGaAs has a relatively high drift velocity of electrons. In addition, these MSM-PD's exhibited a responsivity more than one regardless of the channel width as thin as 10 nm. In this way, ultra-high speed OEIC's can be realized by simultaneously fabricating MSM-PD's and HEMT's on the same epitaxial wafer. Therefore, an application of these MSM-PD's to high-speed OEIC's for use in broad-band optical communication systems is expected.

我们已经制作了HEMT的应变InGaAs的，其摩尔分数接近的InAs，作为通道已被制造和表征的高频性能，使用网络分析仪。栅长为0.1μm的HEMT器件的电流截止频率（fT）超过200 GHz。我们还制作了MSM-PD的应变InGaAs通道，其特征在于使用光纤激光器的光学响应的带宽为400飞秒。具有0.2/0.6μm的L & S的MSM-PD表现出小于20皮秒的脉冲宽度。这是因为应变InGaAs具有相对高的电子漂移速度。此外，这些MSM-PD的表现出的响应度大于1，而不管沟道宽度薄至10 nm。通过这种方式，可以通过在同一外延晶片上同时制造MSM-PD和HEMT来实现超高速OEIC。因此，期望将这些MSM-PD应用于宽带光通信系统中使用的高速OEIC。

项目成果

Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron

InAlAs/InAs/InGaAs 赝晶高电子光学响应时间对栅源电压的依赖性

• 发表时间: 2010
• 期刊: Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
• 作者: Takahisa Ando;Hirohisa Taguchi;Kazuya Uchimura;Miho Mochiduki;Tsutomu Iida and Yoshifumi Takanashi
• 通讯作者: Tsutomu Iida and Yoshifumi Takanashi

In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPHEMTの周波数特性

在同一 In0.75Ga0.25As/In0.53Ga0.47As 衬底上制作的 PHEMT 频率特性

• 发表时间: 2011
• 作者: 山崎陽一;是枝勇太;西尾結;遠藤裕;佐藤宏一;芳沢研哉;田口博久;高梨良文
• 通讯作者: 高梨良文

Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences

• DOI: 10.1007/s11664-010-1489-5
• 发表时间: 2011-01
• 期刊: Journal of Electronic Materials
• 影响因子: 2.1
• 作者: T. Sakamoto;T. Iida;Shota Kurosaki;K. Yano;Hirohisa Taguchi;K. Nishio;Y. Takanashi

Materials Research Society Symposium Proceedings 1108

材料研究学会研讨会论文集 1108

• 发表时间: 2009
• 作者: Nobuhito Wakimura;Yugo Nakagawa;Hirohisa Taguchi;Tsutomu Iida;and Yoshifumi Takanashi
• 通讯作者: and Yoshifumi Takanashi

Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on the same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer

在同一外延片上同时制作具有 In0.75Ga0.25As/InGaAs 沟道层的 PHEMT 和 MSM 光电探测器的特性

• 发表时间: 2011
• 作者: Hirohisa Taguchi;Yuta koreeda;Yutaka Endo;kouichi Sato;Kenya Yoshizawa;Yui Nishio;Tsutomu Iida and Yoshifumi Takanashi
• 通讯作者: Tsutomu Iida and Yoshifumi Takanashi