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Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis method

压铸合成法制造Mg2Si热电能量转换装置

基本信息

批准号：
17360130
负责人：
TAKANASHI Yoshifumi
金额：
$ 9.7万
依托单位：
Tokyo University of Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

Magnesium siliside (Mg2Si) crystals have been grown using the vertical Bridgman method in a non-wetting growth environment, achieved by the use of an anti-adhesion coating on the crucible wall. The minimized adhesion of highly reactive molten magnesium (Mg), silicon (Si) and Mg2Si permitted easy removal of the grown ingot from the crucible, and the external shape of the grown ingot followed the shape of inner wall of the crucible. The grown crystals were a single phase of polycrystalline Mg2Si. The grown crystals exhibited n-type conductivity, which could result from the residual impurities in the Mg source material used and unintentional impurity incorporation during growth. Since Mg2Si is a material candidate for thermal-to-electric energy-conversion, the thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity, were measured as a function of temperature up to 873K. Die-casting process induced characteristics of such thermoelectric prop … More erties are discussed. The maximum dimensionless figure-of-merit was estimated to be 0.17 at 656K. Electrode materials consisting of Cu, Ti and Ni were formed on Bi-doped n-type Mg2Si by means of a monobloc plasma-activated sintering (PAS) technique. Due to the difference in thermal expansion coefficients between Ti and Mg2Si, rather high residual thermal stresses gave rise to the introduction of cracks, which were mainly located in the Mg2Si layer, when Ti was used as the electrode material. In the case of the Cu electrodes, monobloc sintering could not be performed in a reproducible manner because Cu melts abruptly and effuses at around 973K, which is 100K lower than the sintering temperature that is required for Mg2Si of good crystalline quality. When compared with the results for Cu and Ti, the monobloc PAS process for Ni was both stable and reproducible. The room-temperature I-V characteristics of Ni electrodes were considered to be adequate for practical applications, with durable Mg2Si-electrode junction properties being realized at a practical operating temperature of 600K with delta-T=500K. Less

采用垂直布里奇曼法在非润湿生长环境中生长了镁硅化物（Mg 2Si）晶体，通过在坩埚壁上涂上防粘涂层来实现。高反应性熔融镁（Mg）、硅（Si）和Mg 2Si的最小化粘附允许容易地从坩埚移除生长的锭，并且生长的锭的外部形状遵循坩埚的内壁形状。生长的晶体是单相的多晶Mg 2Si。生长的晶体表现出n型导电性，这可能是由于所使用的Mg源材料中的残留杂质和生长过程中无意的杂质掺入。由于Mg 2Si是热电转换的候选材料，因此测量了热电性能，如塞贝克系数，电导率和热导率，作为温度的函数高达873 K。压铸工艺诱导的热电支柱特性 ...更多信息讨论了一些问题。在656 K时，最大无量纲优值估计为0.17。采用单块等离子体活化烧结（PAS）技术在Bi掺杂的n型Mg 2Si上制备了Cu、Ti和Ni电极材料。由于Ti和Mg 2Si之间的热膨胀系数的差异，当Ti用作电极材料时，相当高的残余热应力引起裂纹的引入，裂纹主要位于Mg 2Si层中。在Cu电极的情况下，不能以可再现的方式进行单块烧结，因为Cu在约973 K突然熔化并流出，这比具有良好结晶质量的Mg 2Si所需的烧结温度低100 K。与Cu和Ti的结果相比，Ni的单块PAS工艺既稳定又可重复。Ni电极的室温I-V特性被认为足以满足实际应用，在600 K的实际操作温度下实现了持久的Mg 2Si电极结特性，Δ T = 500 K。少

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Thermoelectric properties of undoped p-type CoSb_3 prepared by the vertical Bridgman crystal growth and the spark plasma sintering

垂直布里奇曼晶体生长和放电等离子体烧结制备的未掺杂p型CoSb_3的热电性能

DOI：
发表时间：
2006
期刊：
Journal of Alloys and Compounds 415
影响因子：
0
作者：
M. Akasaka;T. Iida;J. Soga;N. Kato;T. Sakuma;Y. Higuchi;Y. Takanashi;M. Akasaka;M. Fukano;T.Nemoto;T.Sakuma;S.Furuyama
通讯作者：
S.Furuyama

The thermoelectric properties of bulk crystals of n-, p-type Mg_2Si prepared by the vertical Bridgman method

立式布里奇曼法制备n型、p型Mg_2Si块状晶体的热电性能

DOI：
发表时间：
2008
期刊：
Journal of Applied Physics 104
影响因子：
0
作者：
T. Matsushita;K. Nakajima;M. Suzuki;K. Kimura;A. Agarwal;H.-J. Gossmann;M. Ameen;M. Akasaka
通讯作者：
M. Akasaka

Fabrication of Mg2Si from a Reused-silicon Source and its Thermoelectric Characteristics

再生硅源制备Mg2Si及其热电特性