Development of the discrete electric power-generator from exhaust or waste heat sources using ecologically friendly semiconductors
Development of the discrete electric power-generator from exhaust or waste heat sources using ecologically friendly semiconductors
批准号:
13650317
负责人:
TAKANASHI Yoshifumi
金额:
$0.77万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Mg2Si, an ecologically friendly semiconductor, is a promising thermoelectric material at temperatures ranging 'rom 500 to 800 K.Mg2Si crystals were grown by the vertical Bridgman method in various crucibles made of quartz, alumina, SiNx-coated quartz, CVD pyrolytic graphite, CVD SiC-coated graphite in order to minimize the reaction and sticking of molten Mg-Si during growth.Congruent crystallization was derived from a stoichiometric melt of Mg2Si and incongruent crystallization was derived from nonstoichiometric melts having Mg : Si ratios of 85 : 1 5, 70:30, and 60:40.Grown samples were characterizedby x-ray diffraction and electron-probe microanalysis, and their power factors were calculated from the Seebeck coefficients and electrical-conductivities measured from room temperature to 773 K.The grown crystals were single crystal and showed n-type conductivity in undoped condition. A sample derived from a stoichiometric melt had a Seebeck coefficient of -470 mV/K, while the highest power factor, 1.1x10-5 W/cmK2 at 373 K, was obtained for the sample derived from an incongruent melt with an Mg : Siratio of 70:30.The use of the graphite based crucibles such as pyrolytic and SiC coated graphites caused the carbon incorporati in the grown crystals, resulting in an increase in the Seebeck coefficient and the electrical conductivity.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
S.Kishino, T.Iida, T.Kuji, Y.Takanashi: "Crystal growth of orthorhombic BaSi_2 by the vertical Bridgman method"Thin Solid Films. (In press). (2004)
S.Kishino、T.Iida、T.Kuji、Y.Takanashi:“通过垂直布里奇曼法进行斜方 BaSi_2 的晶体生长”固体薄膜。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Yoshinaga, T.Iida, M.Noda, T.Endo, Y.Takanashi: "Bulk crystal growth of Mg_2Si by the vertical Bridgman method"Thin Solid Films. (In press). (2004)
M.Yoshinaga、T.Iida、M.Noda、T.Endo、Y.Takanashi:“通过垂直布里奇曼法进行 Mg_2Si 的块状晶体生长”固体薄膜。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Ultra-high speed opto-electronic devices
-
批准号:21560365
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.41万
-
财政年份:2009
-
负责人:TAKANASHI Yoshifumi
-
依托单位:
Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis method
-
批准号:17360130
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.7万
-
财政年份:2005
-
负责人:TAKANASHI Yoshifumi
-
依托单位:
海外基金