Development of in-situ TEM measurement system and its application to nanoelectronics

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In recent years, development of electronic devices is energetically investigated, where geometrical and magnetic mictro-and nano-structures contribute to the electronic properties. In this work, in-situ transmission electron microscopy (i. e. in-situ TEM) was introduced to these studies, where TEM image observations and electric measurements were simultaneously performed. To realize these experiments, special TEM holders were developed. One of them was a holder with a piezo actuator (i. e. TEM-STM holder), and the other was with an electromagnet system (named as a TEM-MF holder). Using the TEM-STM holder, formation and disappearance of a conductive filament inside the resistive RAM (ReRAM) layer was clearly observed. This result supports the filament model for ReRAM switching. On the other hand, the motion of the magnetic domain caused by the applied magnetic field generated by the TEM-MF holder was confirmed. Utility of in-situ TEM method was clearly demonstrated.