Studies on hetero epitaxial growth of room-temperature ferromagnetic dielectric insulator films and their device application

点击翻译按钮获取中文摘要

Ba(Fe_<0.2> Zr_<0.8>) O_<3-δ>(BFZO) films were synthesized on Si(001) substrates using SrTiO_3(STO) buffer layers by pulsed laser-beam deposition. According to the in-plane high resolution TEM analysis, the STO-buffered BFZO films partially grew epitaxially on the STO buffer layers with orientation relationships, such as(100) BFZO//(100) STO ;[001] BFZO//[001] STO and(110) BFZO//(110) STO ;[001] BFZO//[001] STO. The results of the XPS analysis using soft X-ray radiation indicated that the relative amount of the Fe4+ions fairly increased for the STO-buffered BFZO films rather than for the BFZO films directly deposited on Si substrates. This causes the almost three times larger magnetization of the STO-buffered BFZO films.